Lamb wave resonator with upper and lower buried electrodes in opposite proportions

A technology of Lamb wave resonators and resonators, which is applied in the radio frequency field of mobile phones, can solve the problems of reducing Q value, stray effect, affecting the performance of resonators, etc., and achieve the effect of reducing frequency temperature coefficient and high Q value

Pending Publication Date: 2021-04-06
GUANGDONG CANCHIP TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The development of 5G mobile phone filters requires lower loss, higher frequency and larger bandwidth, which poses serious challenges to the existing surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies, which are usually affected by more stray effect limitation
The presence of spurious modes can affect the performance of the resonator, such as reducing the Q value (quality factor)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lamb wave resonator with upper and lower buried electrodes in opposite proportions
  • Lamb wave resonator with upper and lower buried electrodes in opposite proportions
  • Lamb wave resonator with upper and lower buried electrodes in opposite proportions

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] The present invention will be described in detail below in conjunction with the accompanying drawings, and the features of the present invention will be further revealed in the following detailed description.

[0044] figure 1 It is a schematic diagram of the structure of a surface acoustic wave interdigital transducer (IDT). like figure 1 As shown in , a metal thin film is deposited on the surface of the piezoelectric substrate, and then a set of comb-shaped intersecting metal electrodes is obtained by using the photolithography method in the semiconductor planar process. These metal electrodes shaped like human fingers are arranged to cross each other, and bus bars at both ends are connected together to form two stages of the device, thereby obtaining an interdigital transducer. exist figure 1 In the example of , a total of 6 metal electrodes labeled 1-6 are shown, indicating that the number of interdigital electrodes of this interdigital transducer is 6, and the e...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a Lamb wave resonator with upper and lower buried electrodes in opposite proportions. The Lamb wave resonator comprises a substrate made of a high-sound-velocity material; a piezoelectric layer which is located above the substrate made of the high-sound-velocity material, wherein a first interdigital transducer and a second interdigital transducer are arranged on the upper surface and the lower surface of the piezoelectric layer respectively, and interdigital electrodes of the first interdigital transducer and the second interdigital transducer are opposite to each other in the stacking direction across the piezoelectric layer, and have the same electrode width, the same electrode thickness, the same electrode distance and the same excitation sound wave wavelength lambda, wherein the proportions of the interdigital electrodes of the first interdigital transducer and the second interdigital transducer embedded into the piezoelectric layer in the thickness direction are h1 and h2 respectively, and h1 + h2 = 1.

Description

technical field [0001] The invention relates to the field of radio frequency of mobile phones, and more particularly, to a Lamb wave resonator with opposite proportions of upper and lower buried electrodes. Background technique [0002] The development of 5G mobile phone filters requires lower losses, higher frequencies, and larger bandwidths, which pose serious challenges to existing surface acoustic wave (SAW) and bulk acoustic wave (BAW) technologies, which are often subject to higher spurious effect limit. In order to meet this demand, the recently proposed Lamb wave structure, which mainly adopts the plate wave mode and has a higher sound speed, shows application advantages in sub-6GHz and millimeter wave mobile communications. In Lamb wave resonators, the main mode is Lamb wave, and modes such as Rayleigh wave are spurious modes. The presence of spurious modes can affect the performance of the resonator, such as reducing the Q value (quality factor). How to improve ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/145
CPCH03H9/02H03H9/145
Inventor 许欣李红浪柯亚兵
Owner GUANGDONG CANCHIP TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products