Semiconductor device and operating method thereof
A method of operation, semiconductor technology, applied in the direction of semiconductor working life test, single semiconductor device test, measurement device, etc., can solve the problems of safety and reliability, transistor threshold voltage and saturation current drop, etc.
Pending Publication Date: 2021-03-16
NAN YA TECH
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Problems solved by technology
[0002] Transistor reliability is becoming more and more important, but NBTI (Negative Bias Temperature Instability) and HC (Hot Carriers) cause the threshold voltage and saturation current of the transistor to drop
For devices containing transistors, when transistors decay, safety and reliability issues can arise
Method used
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[0023] The following disclosure provides many different embodiments or illustrations for implementing different features of the invention. The components and arrangements of specific examples are used in the following discussion to simplify the present invention. Any exemplifications discussed are for illustrative purposes only and do not in any way limit the scope and meaning of the invention or its exemplifications. In addition, the present invention may repeatedly refer to numerical symbols and / or letters in different examples, and these repetitions are for the purpose of simplification and illustration, and do not specify the relationship between different embodiments and / or configurations discussed below.
[0024] Unless otherwise specified, the terms used throughout the specification and claims generally have the ordinary meaning of each term as used in the art, in this disclosure and in the special context. Certain terms used to describe the present invention are discu...
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The invention discloses a semiconductor device and an operating method thereof. The semiconductor includes a first circuit, a second circuit, and a comparison circuit. The first circuit includes a first transistor. The first circuit is configured to output a first output. The second circuit includes a second transistor. The second circuit is configured to output a second output. The comparison circuit is configured to compare the first output and the second output to generate a comparison result, and to output the comparison result. The first transistor decays over a time interval and the first output changes from a first voltage value to a second voltage value over the time interval. The second transistor does not decay over the time interval and the second output of the second circuit maintains to be the third voltage value over the time interval. The semiconductor device can timely and easily detect a damped transistor.
Description
technical field [0001] The present invention relates to a semiconductor device and its operating method, and more particularly to a semiconductor device for detecting deterioration of a transistor and its operating method. Background technique [0002] The reliability of transistors is becoming more and more important, but NBTI (Negative Bias Temperature Instability) and HC (Hot Carriers) cause the threshold voltage and saturation current of transistors to drop. For devices that contain transistors, when the transistors decay, it can cause safety and reliability issues. Contents of the invention [0003] An object of the present invention is to provide a semiconductor device capable of detecting the attenuation degree of a transistor of a circuit. [0004] One aspect of the present invention is to provide a semiconductor device. The semiconductor device includes a first circuit, a second circuit and a comparison circuit. The first circuit includes a first transistor. T...
Claims
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IPC IPC(8): G01R31/26
CPCG01R31/2601G01R31/2607G01R31/2621G01R31/2642
Inventor 陈至仁
Owner NAN YA TECH