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Thin film acoustic wave devices with composite substrate

A thin film and surface acoustic wave technology, applied in piezoelectric/electrostrictive/magnetostrictive devices, electrical components, impedance networks, etc., can solve problems such as fracture

Pending Publication Date: 2021-03-16
QUALCOMM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if the two bonded wafers have different coefficients of thermal expansion, cracking may occur when the bonded wafer pair is annealed or processed at higher temperatures

Method used

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  • Thin film acoustic wave devices with composite substrate
  • Thin film acoustic wave devices with composite substrate
  • Thin film acoustic wave devices with composite substrate

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Embodiment Construction

[0017] The detailed description, given below in conjunction with the accompanying drawings, is intended as a description of various aspects and is not intended to represent the only aspects in which the concepts described herein may be practiced. The detailed description includes specific details to provide an understanding of various concepts. It will be apparent, however, to one skilled in the art that these concepts may be practiced without these specific details. In some instances, well-known structures and components are shown in block diagram form in order to avoid obscuring the concepts.

[0018] Surface acoustic waves (SAW) are acoustic waves propagating along the surface of a material exhibiting elasticity, the amplitude of which typically decays exponentially with depth into the substrate. SAW devices are used as filters, oscillators, transformers and sensors. SAW filters are now used in mobile phones. They offer significant advantages in performance, cost and siz...

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Abstract

In certain aspects, a thin film surface acoustic wave, SAW, die comprises a high-resistivity substrate (110), a bonding layer (108) on the high-resistivity substrate, and a thin film piezoelectric island (112) on the bonding layer, wherein an edge of the thin film piezoelectric island is offset from an edge of the bonding layer. In another aspect, a manufacturing method for the SAW die comprises providing a piezoelectric wafer (102) having a front surface (102f) and a back surface (102b); forming an exfoliation layer (104) in the piezoelectric wafer from the front surface; forming a pluralityof trenches (106) on the piezoelectric wafer from the front surface to form a plurality of piezoelectric islands (112); bonding the piezoelectric wafer (102) from the front surface to a high- resistivity substrate (110) though a bonding layer (108); and removing a portion of the piezoelectric wafer between the back surface (102b) and the exfoliation layer (104).

Description

[0001] priority claim [0002] This patent application claims priority to, and is assigned to the assignee, Application No. 16 / 050,212, entitled "Thin Film Devices," filed July 31, 2018, and is hereby expressly incorporated by reference in this article. technical field [0003] Aspects of the present disclosure relate to thin film devices, and more particularly, to structures and fabrication methods for thin film devices on high resistivity silicon substrates. Background technique [0004] In some examples, a layer transfer process is used to transfer the top active device portion of a silicon-on-insulator (SOI) wafer to a handle wafer. During this process, the top of the SOI wafer is bonded to a handle wafer. The same process can be used to build thin-film devices, such as thin-film surface acoustic waves (SAW), on high-resistivity substrates. For example, a thin film piezoelectric wafer can be bonded to a high resistivity silicon handle wafer. However, if the two bond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H3/08H01L41/312H01L41/313H10N30/072H10N30/073H10N30/088
CPCH03H9/02834H03H9/02622H03H9/02574H03H9/02559H03H9/02629H03H3/08H03H3/10H10N30/073H03H9/02897H10N30/072H10N30/088
Inventor S·A·法内利S·格科特佩里A·A·希拉卡瓦
Owner QUALCOMM INC