Array substrate, preparation method thereof, display panel and display device

Abstract

The invention discloses an array substrate, a preparation method thereof, a display panel and a display device. A first thin film transistor in the array substrate comprises a plurality of first through holes and a plurality of second through holes, the first through holes penetrate through at least one first insulating layer, the second through holes penetrate through at least one second insulating layer, and a source-drain metal layer is electrically connected with a first active layer through the first through holes and the second through holes; and an included angle between the side wall of each first through hole and the bottom surface of each first through hole is a first included angle, an included angle between the side wall of each second through hole and the bottom surface of each second through hole is a second included angle, the first included angle is not equal to the second included angle,a second thin film transistor consists of a third through hole, the third through hole runs through at least one second insulating layer, and the source-drain metal layer is electrically connected with a second active layer through the third through hole. According to the technicalscheme provided by the embodiment of the invention, the problem of etching residue or over-etching of the through hole between the source-drain metal layer and the first active layer is avoided.

Description

technical field [0001] Embodiments of the present invention relate to the field of display technologies, and in particular, to an array substrate and a manufacturing method thereof, a display panel, and a display device. Background technique [0002] With the continuous development of display technology, users have higher and higher requirements on the performance of display devices. Thin film transistors are the main driving elements of display panels, which are directly related to the development direction of high-performance display devices. [0003] Thin film transistors with different active layer materials have different device performance advantages. In order to comprehensively utilize the performance advantages of various types of thin film transistors to improve the driving capability of display devices, display panels that include two types of thin film transistors have appeared. The active layer materials are different. In order to prevent the high-temperature pr...

AI Technical Summary

Problems solved by technology

In the above structure, in the thin film transistor whose active layer is far away from the source-drain metal layer, the depth of the through hole connecting the active layer and the source-drain metal layer is large, the etching process is difficult, and the etching time is too short to easily cause etching. If the etching time is too long, the active layer of the thin film transistor will be over-etched

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