Semiconductor memory device and method of manufacturing the same

Abstract

Disclosed are a semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a stack structure comprising horizontal electrodes sequentially stacked ona substrate including a cell array region and an extension region and horizontal insulating layers between the horizontal electrodes. The semiconductor memory device may further include vertical structures that penetrate the stack structure, a first one of the vertical structures being on the cell array region and a second one of the vertical structures being on the extension region. Each of the vertical structures includes a channel layer, and a tunneling insulating layer, a charge storage layer and a blocking insulating layer which are sequentially stacked on a sidewall of the channel layer.The charge storage layer of the first vertical structure includes charge storage patterns spaced apart from each other in a direction perpendicular to a top surface of the substrate with the horizontal insulating layers interposed therebetween. The charge storage layer of the second vertical structure extends along sidewalls of the horizontal electrodes and sidewalls of the horizontal insulatinglayers.

Description

technical field [0001] Embodiments of the inventive concepts relate to semiconductor memory devices, and more particularly, to three-dimensional (3D) nonvolatile memory devices and methods of manufacturing the 3D nonvolatile memory devices. Background technique [0002] Semiconductor devices have been highly integrated to provide improved performance and generally lower manufacturing costs. The integration density of a semiconductor device can directly affect the cost of the semiconductor device, resulting in a generally high demand for highly integrated semiconductor devices. The integration density of a typical two-dimensional (2D) or planar semiconductor device can be determined by the area of ​​a memory cell unit. Therefore, the integration density of typical 2D or planar semiconductor devices can be affected by the techniques used to form fine patterns. However, because the equipment for forming fine patterns can be expensive, the integration density of 2D semiconduct...

AI Technical Summary

Problems solved by technology

However, because the equipment used to form fine patterns can be expensive, the integration density of 2D semiconductor devices continues to increase, but will be limited

Images