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Boost capacitor voltage detection circuit

A technology of capacitance voltage and detection circuit, which is applied in the direction of measuring current/voltage, measuring device, measuring electric variable, etc., and can solve the problem that NMOS tube cannot be turned on normally.

Active Publication Date: 2021-04-09
NORTH CHINA UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, due to the leakage of the capacitor in the boost circuit, when the voltage of the capacitor is too small, the driven NMOS tube cannot be turned on normally. Therefore, it is necessary to use a circuit to judge the voltage at both ends of the capacitor in the boost circuit. Boost capacitor voltage detection circuit for the voltage across the capacitor in the circuit

Method used

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Embodiment Construction

[0023] In order to enable those skilled in the art to better understand the technical solutions in the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described The embodiments are only some of the embodiments of the present application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the scope of protection of this application.

[0024] figure 1 A circuit diagram of a Boost capacitor voltage detection circuit provided by an embodiment of the present invention. Such as figure 1 As shown, a Boost capacitor voltage detection circuit provided by the present application includes a Boost capacitor voltage judging circuit and an inverter amplifying circuit; the Boost capac...

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Abstract

The invention provides a Boost capacitor voltage detection circuit. The Boost capacitor voltage detection circuit comprises a Boost capacitor voltage judgment circuit and a phase inverter amplification circuit, the Boost capacitor voltage judgment circuit comprises an MOS tube M1 and an MOS tube M0, and the MOS tube M1 serves as an input end and is used for judging the Boost capacitor voltage; the MOS tube M0 is used for providing bias current for the Boost capacitor voltage judgment circuit; and if the Boost capacitor voltage is lower than the threshold voltage of the MOS tube M1, the input voltage of the phase inverter amplification circuit is reduced, and the Boost capacitor voltage output by the inverter amplification circuit is in an undervoltage state. Boost capacitor voltage is judged through threshold voltage of the MOS tube M1, a source electrode and a grid electrode of the MOS tube M1 are connected to the two ends of the Boost capacitor respectively, and if the Boost capacitor voltage is reduced to the threshold voltage of the MOS tube M1, input voltage of the inverter amplifying circuit is reduced. Thephase inverter amplification circuit is equivalent to a rough comparator, and the output voltage state of the Boost capacitor is an under-voltage state.

Description

technical field [0001] The invention belongs to the field of integrated circuit design, in particular to a Boost capacitor voltage detection circuit. Background technique [0002] With the development of integrated circuits, DC-DC integration is getting higher and higher. Many switching power supply chips have integrated MOS tubes (Metal Oxide Semiconductor, Metal Oxide Semiconductor Field Effect Transistors) into the chip. The DC-DC It is a device that converts electric energy of one voltage value into electric energy of another voltage value in a DC circuit. Since the on-resistance of NMOS transistors with the same area is smaller than that of PMOS transistors, in many chip integrations, NMOS transistors are used instead of PMOS transistors to achieve the purpose of reducing chip area and improving efficiency. [0003] Due to the characteristics of the NMOS tube itself, in order to make the drain voltage of the NMOS tube consistent with the source voltage, a higher gate v...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R19/165
CPCG01R19/16519
Inventor 刘文楷王钰宁成凯陈勇
Owner NORTH CHINA UNIVERSITY OF TECHNOLOGY