Photoelectric chip and preparation method thereof
A technology of optoelectronic chips and regions, which is applied in the manufacturing of circuits, electrical components, and final products, etc., and can solve the problems of inconvenient performance testing of optoelectronic chips and low yield rate.
Pending Publication Date: 2021-04-09
SHENZHEN PHOGRAIN INTELLIGENT SENSING TECH CO LTD
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Problems solved by technology
[0004] In order to solve the technical problems of inconvenient performance testing and low yield rate of photoelectric chips in the related art, the invention provides a photoelectric chip and a method for preparing the photoelectric chip
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[0028] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, the specific implementation manners of the present invention will now be described in detail with reference to the accompanying drawings. In the following description, it should be understood that "front", "rear", "upper", "lower", "left", "right", "longitudinal", "horizontal", "vertical", "horizontal", The orientation or positional relationship indicated by "top", "bottom", "inner", "outer", "head", "tail", etc. is based on the orientation or positional relationship shown in the drawings, and is constructed and operated in a specific orientation, It is only for the convenience of describing the technical solution, but does not indicate that the referred device or element must have a specific orientation, so it should not be construed as a limitation of the present invention.
[0029] It should also be noted that terms such as "installation", "connection", ...
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The invention relates to the technical field of chip testing, and discloses a photoelectric chip and a preparation method of the photoelectric chip. The photoelectric chip comprises a first area, a second area and a third area. The first area comprises a substrate, an epitaxial structure arranged on the substrate and a masking film arranged on the epitaxial structure; the second area comprises a substrate, an epitaxial structure arranged on the substrate and a first diffusion doping layer arranged on the epitaxial structure; the third area comprises a substrate, an epitaxial structure arranged on the substrate and a second diffusion doping layer arranged on the epitaxial structure; the first diffusion doping layer and the second diffusion doping layer are spaced apart from each other. By forming the first diffusion doping layer and the second diffusion doping layer, the performance and parameters of the photoelectric chip are tested on the first diffusion doping layer, and the situation that the performance of the photoelectric chip is inconvenient to detect due to the fact that the diameter of the tip of the probe is too large or the probe cannot directly detect the second diffusion region is avoided; and the yield of the photoelectric chip is improved.
Description
technical field [0001] The invention relates to the technical field of chip testing, in particular to a photoelectric chip and a method for preparing the photoelectric chip. Background technique [0002] In the preparation process of photodetector chips, the diffusion process is a link that directly affects the performance of photodetector chips. After the diffusion of photodetector chips, it is usually necessary to measure the diffusion depth of photodetector chips. However, measuring the diffusion depth of photodetector chips The operation is more complicated and the precision is limited. Generally, the diffusion depth of the photodetector chip is determined by testing other parameters, for example, by testing the magnitude of the breakdown voltage. [0003] However, the rate of high-speed photodetector chips is above 25Gbps, single photon detector chips, or other photoelectric chips with special requirements, usually due to their very small diffusion area, after the phot...
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IPC IPC(8): H01L31/10H01L31/18H01L21/66
CPCH01L22/30H01L31/10H01L31/184Y02P70/50
Inventor 邹颜杨彦伟张续朋
Owner SHENZHEN PHOGRAIN INTELLIGENT SENSING TECH CO LTD