A non-volatile flip-flop based on bipolar rram

Abstract

The present invention relates to the field of flip-flop related devices, in particular to a non-volatile flip-flop based on bipolar RRAM, as shown in the attached drawing, consisting of PMOS transistor 1, PMOS transistor 2, PMOS transistor 3, PMOS transistor 4, PMOS transistor 5, NMOS transistor 1, NMOS transistor 2, NMOS transistor 3, NMOS transistor 4, NMOS transistor 5, current limiting resistor R1, current limiting resistor R2, current limiting resistor R3, current limiting resistor R4, reference resistor R5, inversion Composed of inverter 1, inverter 2, inverter 3, inverter 4, and resistive random access memory RRAM, the input end has power supply VDD, ground GND, input data D and input clock PK, and the output end is output data Q. The bipolar RRAM-based nonvolatile flip-flop of the present invention solves the problem that the traditional flip-flop cannot save data after power failure, and the previously stored data cannot be recovered after power supply is restored.

Description

technical field [0001] The invention relates to the field of flip-flop related devices, in particular to a bipolar RRAM-based non-volatile flip-flop. Background technique [0002] Flip-flop is one of the most used units in sequential logic circuits. It is widely used in integrated circuits at present. Because traditional flip-flops cannot save data after power failure, and the data stored before restoration of power supply cannot be restored, it leads to microprocessors, etc. Unsaved data will be lost after the integrated circuit is suddenly powered off. [0003] RRAM (Resistive Random Access Memory) is a non-volatile memory device that stores data information by changing its own resistance. It has two ports. Bipolar RRAM refers to a type of RRAM with the following characteristics: RRAM manufacturing Complete, before a certain voltage is applied between the two ports for the first time, the RRAM is in a high resistance state, the direction of the first applied voltage is th...

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Problems solved by technology

[0004] For example, the utility model patent with application number 202020063538.8 discloses a non-volatile latch based on RRAM and an integrated circuit. The circuit proposes a non-volatile latch based on RRAM. Two such latches A flip-flop can be formed, but this circuit requires a special timing for backup operation. Only after the value of the latch is written into RRAM through the backup operation can the data of the latch be kept. The operation timing of this circuit is not compatible with traditional CMOS latches The operation timing requires a large number of transistors and RRAM, which is not conducive to the use in large-scale integrated circuits, nor is it compatible with traditional CMOS integrated circuits

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