ZQ calibration using current source

A technology of current and current mirror, which is applied in the field of ZQ calibration, can solve the problems that the resistance value of terminal components remains unchanged and cannot be guaranteed.

Active Publication Date: 2021-04-13
MICRON TECH INC
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although trim settings are available for the termination assembly, there is no guarantee that the resistance value of the termination assembly will remain constant as the temperature of the memory device changes due to changes in operating and / or ambient temperature

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • ZQ calibration using current source
  • ZQ calibration using current source
  • ZQ calibration using current source

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] This disclosure relates to ZQ calibration in memory systems. The memory devices may each contain termination calibration circuitry having pull-down circuits and / or pull-up circuits for calibrating the impedance of the data bus terminations. The memory device may also include a reference calibration circuit configured to generate a calibration current. In some embodiments, the terminal calibration circuit may be configured to program the impedance of the pull-down circuit and / or the pull-up circuit based on the calibration current.

[0020] figure 1 is a block diagram of a memory system in accordance with the present technology. refer to figure 1 , the memory system of the present disclosure will be described with reference to memory system 100 by way of example and not limitation. The memory system 100 may be a volatile memory such as SRAM or DRAM, or a non-volatile memory such as FLASH memory or ferroelectric memory. In one embodiment, memory system 100 may be a d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to ZQ calibration using a current source. A memory device includes a terminal calibration circuit having at least one of a pull-down circuit or a pull-up circuit used in calibrating an impedance of a data bus termination. The memory device also includes a reference calibration circuit configured to generate a calibration current. The terminal calibration circuit can be configured to program an impedance of the least one of a pull-down circuit or a pull-up circuit based on the calibration current.

Description

technical field [0001] The present disclosure relates to systems and methods for ZQ calibration in memory systems, and more particularly to ZQ calibration using current sources. Background technique [0002] Semiconductor systems (eg, semiconductor memories and processors) transmit data across data communication lines configured to have carefully matched impedance values. Variations in certain operating parameters (eg, temperature, etc.) can cause impedance mismatches that can adversely affect data transmission rate and quality. To mitigate these disadvantages, semiconductor systems may incorporate termination components with programmable impedances that can be adjusted based on a calibration process as operating conditions change. In some embodiments, the termination assembly is programmed based on voltage measurements made on connection pads attached to external connections (also referred to herein as "external pins" or "pins") of the semiconductor memory package. impeda...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C29/02G11C29/00G11C11/4063
CPCG11C29/028G11C29/78G11C11/4063H03K19/0005G11C2207/2254H03H11/28H03H11/54
Inventor 佐藤康夫高桥弘树塚田修一何源
Owner MICRON TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap