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Magnetic tunnel junction structure of magnetic random access memory

A magnetic tunnel junction and random access storage technology, applied in the field of memory, can solve the problem of difficult to meet the requirements of the leakage magnetic field of ultra-small MRAM devices, and achieve the effect of strengthening interface anisotropy, electrical and yield improvement

Pending Publication Date: 2021-04-13
SHANGHAI CIYU INFORMATION TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The design of the reference layer plus an antiferromagnetic layer (SyAF) can reduce the influence of the leakage field on the free layer. However, in the current structure, it is still difficult to meet the requirements of the ultra-small MRAM device for the leakage field.

Method used

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  • Magnetic tunnel junction structure of magnetic random access memory
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Embodiment Construction

[0022] Please refer to the drawings in the accompanying drawings, wherein like reference numerals refer to like components. The following description is based on illustrated specific embodiments of the present application, which should not be construed as limiting other specific embodiments of the present application that are not described in detail here.

[0023] The following descriptions of the various embodiments refer to the attached drawings to illustrate specific embodiments that the present application can be implemented in. The directional terms mentioned in this application, such as "up", "down", "front", "rear", "left", "right", "inside", "outside", "side", etc., are for reference only The orientation of the attached schema. Therefore, the directional terms used are used to illustrate and understand the application, but not to limit the application.

[0024] The terms "first", "second", "third", etc. (if any) in the description and claims of this application and t...

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Abstract

The invention provides a magnetic tunnel junction structure of a magnetic random access memory. The magnetic tunnel junction structure comprises a lattice transition multilayer design of a lattice barrier layer, and the characteristic of interface anisotropy is enhanced. Meanwhile, lattice transformation and strong ferromagnetic coupling between the antiferromagnetic layer with the face-centered cubic crystal structure and the reference layer with the body-centered cubic accumulation structure are achieved, and improvement of magnetism, electricity and the yield of the magnetic tunnel junction unit and miniaturization of the device are facilitated.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a magnetic tunnel junction structure of a magnetic random access memory. Background technique [0002] Magnetic Random Access Memory (MRAM) in the Magnetic Tunnel Junction (Magnetic Tunnel Junction; MTJ) with vertical anisotropy (Perpendicular Magnetic Anisotropy; PMA), as a free layer for storing information, has two in the vertical direction The magnetization direction, namely: up and down, corresponds to "0" and "1" or "1" and "0" in binary respectively. In practical applications, when reading information or leaving it blank, the magnetization direction of the free layer will remain unchanged; during the writing process, if a signal different from the existing state is input, the magnetization direction of the free layer will be reversed by 180 degrees in the vertical direction. The ability of the magnetization direction of the free layer of the magnetic random access memory t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H01L27/22H10N50/10
CPCH10B61/00H10N50/85H10N50/10
Inventor 张云森郭一民陈峻肖荣福
Owner SHANGHAI CIYU INFORMATION TECH CO LTD
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