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Cadmium telluride crystal growth device and growth method thereof

A technology of crystal growth and cadmium telluride, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of poor quality, incomplete crystal, poor infrared transmittance, etc.

Pending Publication Date: 2021-04-20
清远先导材料有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Usually, the growth method and growth device for growing cadmium telluride crystals make it very easy to transform into polycrystalline or twin crystals during the growth process of cadmium telluride crystals, and cause defects such as incomplete crystals, poor quality and poor infrared transparency.

Method used

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  • Cadmium telluride crystal growth device and growth method thereof
  • Cadmium telluride crystal growth device and growth method thereof

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Embodiment Construction

[0029] The drawings illustrate embodiments of the disclosure and it is to be understood that the disclosed embodiments are merely examples of the disclosure, which may be embodied in various forms and therefore specific details disclosed herein should not be construed as limiting. , but merely as a basis for the claims and as a representative basis for teaching one of ordinary skill in the art to variously employ the present disclosure.

[0030] In order to make the purpose, technical solutions and advantages of the embodiments of the present disclosure clearer, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments It is a part of the embodiments of the present disclosure, but not all of them.

[0031] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as com...

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Abstract

The invention provides a cadmium telluride crystal growth device and a growth method thereof. The cadmium telluride crystal growth device comprises a crucible, a sealing bubble, a furnace body and a temperature control device. The crucible is used for containing tellurium raw materials and cadmium raw materials and is provided with a first end and a second end, the first end of the crucible is closed, and the second end of the crucible is sealed through sealing bubbles; wherein the furnace body is provided with a furnace chamber, the crucible is located in the furnace chamber, the furnace chamber is sequentially provided with a first temperature zone, a second temperature zone and a third temperature zone from bottom to top, and the temperature control devices are arranged in the first temperature zone, the second temperature zone and the third temperature zone and used for heating the first temperature zone, the second temperature zone and the third temperature zone and controlling the temperatures thereof; the sealing bulb is arranged in the first temperature zone, and the first end of the crucible is arranged in the third temperature zone. According to the cadmium telluride crystal growth method, the cadmium telluride crystal growth device is used for cadmium telluride crystal growth, and the obtained cadmium telluride crystal has the advantages of high integrity, high quality, high single crystal proportion and good infrared transmittance.

Description

technical field [0001] The disclosure relates to the field of crystal preparation, in particular to a cadmium telluride crystal growth device and a growth method thereof. Background technique [0002] Cadmium telluride is an important II-VI compound semiconductor material with a resistivity of about 10 8 Ω·cm, the Schottky barrier type and PIN junction detectors prepared with it have the characteristics of high reverse working voltage and small leakage current, and have been widely used in X-ray fluorescence analysis below 30keV. [0003] Usually, the growth method and growth device for growing cadmium telluride crystals make it very easy to transform into polycrystalline or twin crystals during the growth process of cadmium telluride crystals, and cause defects such as incomplete crystals, poor quality and poor infrared transparency. Contents of the invention [0004] In view of the defects existing in the prior art, the purpose of this disclosure is to provide a cadmium...

Claims

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Application Information

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IPC IPC(8): C30B11/00C30B29/48
CPCY02P70/50
Inventor 狄聚青朱刘胡智向苏湛曾令康
Owner 清远先导材料有限公司
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