High-precision two-dimensional pose adjusting device for in-situ measurement of damaged precursor

Abstract

The invention discloses a high-precision two-dimensional pose adjusting device for in-situ measurement of a damaged precursor, which comprises a base and a plurality of two-dimensional motion platforms (1) arranged on the base, a controllable magnetic field generator (2) is arranged on the two-dimensional motion platforms (1), and a clamp (3) for clamping a measured optical element is adsorbed on the controllable magnetic field generator (2). The in-situ test effect can be achieved by keeping the optical element at the same position each time the optical element is repeatedly tested, the structure is small and light, and other detection or processing processes of the optical element are basically not influenced.

Description

technical field [0001] The invention relates to a damage precursor measurement technology, in particular to a high-precision two-dimensional pose adjustment device for in-situ measurement of a damage precursor. Background technique [0002] In a strong light system, laser-induced damage is often one of the important reasons for damaging optical components and affecting the stable operation of the system. In the process of inertial confinement fusion (ICF), how to improve the anti-laser damage performance of fused silica optical elements is currently the bottleneck problem in increasing the output power of ICF. Theoretical calculations show that the intrinsic damage threshold of fused silica material is as high as 100J / cm 2 , but in the actual application process, often in a few J / cm 2 Under the action of the laser flux, the fused silica will start to generate laser-induced damage. The reason is that the fused silica element will produce some typical damage precursor struc...

AI Technical Summary

Problems solved by technology

The Chinese patent document with the publication number CN107015028 discloses a nanoscale initial laser damage detection method and system based on in-situ detection technology. It is possible to measure the nanometer size of in-situ micro-regions, but the implementation steps are extremely complicated, and it is very difficult to find nano-scale in-situ defects in millimeter or even micron-scale regions by artificial marking methods

In addition, nanoscale changes lack surrounding reference objects, and it is difficult to judge whether the changed defects are consistent with the defects in the previous measurement process. In this way, it is very easy to detect defects in situ, which will affect the test results of the experiment.

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