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Sealing ring structure and preparation method thereof

A sealing ring and enhanced technology, which is applied in the field of sealing ring structure and its preparation, can solve the problems of increasing chip area, occupying the area of ​​integrated circuit chip, disadvantageous to miniaturization of devices, etc.

Active Publication Date: 2021-04-23
湖南三安半导体有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the electrostatic protection structure provided separately will occupy a certain chip area of ​​the integrated circuit, resulting in an increase in the chip area of ​​the device, which is not conducive to the miniaturization of the device

Method used

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  • Sealing ring structure and preparation method thereof
  • Sealing ring structure and preparation method thereof
  • Sealing ring structure and preparation method thereof

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Embodiment Construction

[0028] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0029] Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art wi...

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Abstract

The invention discloses a sealing ring structure and a preparation method thereof and relates to the technical field of integrated circuits. The sealing ring structure comprises an enhanced high-electron-mobility transistor, a diode group and a resistor which are manufactured through a semiconductor epitaxial layer, the enhanced high-electron-mobility transistor is used for being annularly arranged on the periphery of a device region of a semiconductor device, and the diode group and the resistor are used for being arranged on the periphery of the device region; the anode of the diode group is in metal connection with the first electrode of the semiconductor device, the cathode is in metal connection with the first metal end of the resistor, and the second metal end of the resistor is in metal connection with the second electrode of the semiconductor device; and the grid electrode of the enhanced high-electron-mobility transistor is connected with the cathode metal of the diode group, the drain electrode is used for being connected with the first electrode metal, and the source electrode is used for being connected with the second electrode metal of the semiconductor device. The sealing ring structure can realize an electrostatic protection function by utilizing the sealing ring region, so that the area of the device is saved.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular, it is applied to semiconductor devices, and relates to a sealing ring structure and a preparation method thereof. Background technique [0002] Electro-Static discharge (ESD) is the phenomenon of charge release and transfer between integrated circuit chips and external objects. Due to the release of a large amount of charge in a short period of time, the energy generated by ESD is much higher than the capacity of the chip, so it is likely to cause temporary failure or even permanent damage to the function of the chip. Therefore, in order to avoid damage to integrated circuits by static electricity as much as possible, electrostatic discharge protection design is very important in improving product reliability and yield. [0003] Generally, an integrated circuit is separately provided with an electrostatic protection structure, so as to protect the integrated circuit wh...

Claims

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Application Information

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IPC IPC(8): H01L27/02H01L23/00
CPCH01L27/0266H01L27/0251H01L23/562H01L27/0288H01L27/0248H01L29/2003H01L29/7786H01L29/1066H01L29/872H01L29/8605H01L29/205H01L23/585H01L23/60H01L29/66431H01L29/861
Inventor 林科闯徐宁刘成何俊蕾林育赐赵杰叶念慈
Owner 湖南三安半导体有限责任公司
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