Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Seal ring structure and preparation method thereof

A sealing ring and enhanced technology, which is applied in the field of sealing ring structure and its preparation, can solve the problems of unfavorable device miniaturization, occupation of integrated circuit chip area, and increase of chip area, and achieve the effect of avoiding stress or impurity damage

Active Publication Date: 2022-05-10
HUNAN SANAN SEMICON CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the electrostatic protection structure provided separately will occupy a certain chip area of ​​the integrated circuit, resulting in an increase in the chip area of ​​the device, which is not conducive to the miniaturization of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Seal ring structure and preparation method thereof
  • Seal ring structure and preparation method thereof
  • Seal ring structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0029] Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art wi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A sealing ring structure and a preparation method thereof relate to the technical field of integrated circuits. The sealing ring structure includes an enhanced high electron mobility transistor, a diode group and a resistor manufactured through a semiconductor epitaxial layer. On the periphery of the device area; the anode of the diode group is used for metal connection with the first electrode of the semiconductor device, the cathode is metal connected with the first metal end of the resistor, and the second metal end of the resistor is used for metal connection with the second electrode of the semiconductor device; The gate of the type high electron mobility transistor is connected with the cathode metal of the diode group, the drain is used for connecting with the first electrode metal, and the source is used for connecting with the second electrode metal of the semiconductor device. The sealing ring structure can utilize the area of ​​the sealing ring to realize the electrostatic protection function, thereby saving the area of ​​the device.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular, it is applied to semiconductor devices, and relates to a sealing ring structure and a preparation method thereof. Background technique [0002] Electro-Static discharge (ESD) is the phenomenon of charge release and transfer between integrated circuit chips and external objects. Due to the release of a large amount of charge in a short period of time, the energy generated by ESD is much higher than the capacity of the chip, so it is likely to cause temporary failure or even permanent damage to the function of the chip. Therefore, in order to avoid damage to integrated circuits by static electricity as much as possible, electrostatic discharge protection design is very important in improving product reliability and yield. [0003] Generally, an integrated circuit is separately provided with an electrostatic protection structure, so as to protect the integrated circuit wh...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02H01L23/00
CPCH01L27/0266H01L27/0251H01L23/562H01L27/0288H01L27/0248H01L29/2003H01L29/7786H01L29/1066H01L29/872H01L29/8605H01L29/205H01L23/585H01L23/60H01L29/66431H01L29/861
Inventor 林科闯徐宁刘成何俊蕾林育赐赵杰叶念慈
Owner HUNAN SANAN SEMICON CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com