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Chamber temperature monitoring method

A chamber, actual temperature technology, used in semiconductor/solid-state device testing/measurement, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as monitoring epitaxy chambers

Pending Publication Date: 2021-04-30
GUANGZHOU CANSEMI TECH INC
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  • Abstract
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  • Claims
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Problems solved by technology

[0004] Therefore, there is currently no suitable method to monitor the accuracy of the epitaxial chamber temperature

Method used

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Embodiment Construction

[0035] At present, in the atmospheric pressure epitaxy process, the process temperature is a very important parameter, and the process temperature corresponds to the temperature of the chamber of the epitaxy machine, so the accuracy of monitoring the temperature of the chamber of the epitaxy machine is of great significance. The main factors affecting the accuracy of the chamber temperature are: ① Whether the pyrometer itself is normal; ② The influence of the cover plate. As for the influence of the cover plate, at present, the only way to judge whether there is residual coating on the cover plate is through regular cavity opening, and observers can observe with naked eyes. However, this method of observing with the naked eye is not reliable, and there are also large differences between different observers. Therefore, the deviation between the reading temperature of the pyrometer and the actual temperature of the chamber caused by the influence of the cover plate cannot be disc...

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Abstract

The invention provides a chamber temperature monitoring method, which comprises the following steps of: firstly, providing a wafer; secondly, forming an oxide layer on the wafer; then, carrying out ion implantation on the wafer on which the oxide layer is formed; next, putting the wafer subjected to ion implantation into a chamber for high-temperature annealing; next, removing the oxide layer on the wafer; and finally, measuring the square resistance of the wafer so as to monitor the temperature of the chamber. The accuracy of the chamber temperature can be rapidly and reliably monitored by measuring the square resistance, the monitoring efficiency is improved, and the risk caused by chamber temperature deviation is avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a chamber temperature monitoring method. Background technique [0002] Usually, in the atmospheric pressure epitaxy process, the process temperature is a very important parameter, and the process temperature corresponds to the temperature of the chamber of the epitaxy machine, so the accuracy of monitoring the temperature of the chamber of the epitaxy machine is of great significance. The main factors affecting the process temperature accuracy of the epitaxial machine include two aspects: ① Whether the Pyrometer (pyrometer) itself is normal; ② The influence of the Dome (cover plate) (the residual coating on the cover plate will affect the reading temperature of the pyrometer) . [0003] As for the influence of the cover plate, at present, the only way to judge whether there is residual coating on the cover plate is through regular cavity opening, and observers can observe...

Claims

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Application Information

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IPC IPC(8): H01L21/66H01L21/67
CPCH01L22/12H01L22/26H01L21/67248
Inventor 李远哲李岩付志强
Owner GUANGZHOU CANSEMI TECH INC
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