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Semiconductor structure and manufacturing method thereof

A manufacturing method, semiconductor technology

Pending Publication Date: 2021-05-04
NUVOTON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Current semiconductor structures used to form sensing devices are generally satisfactory but not satisfactory in all respects

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

Examples

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Embodiment Construction

[0058] The following disclosure provides many different embodiments or examples for implementing different features of the present invention. The following disclosure describes specific examples of components and their arrangements for simplicity of illustration. Of course, these specific examples are not intended to be limiting. For example, if an embodiment of the present disclosure describes that a first characteristic component is formed on or above a second characteristic component, it may include an embodiment in which the first characteristic component is in direct contact with the second characteristic component, and also Embodiments may be included in which additional features are formed between the first and second features such that the first and second features may not be in direct contact.

[0059] It should be understood that additional operational steps may be performed before, during or after the method, and in other embodiments of the method, some of the oper...

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Abstract

The invention discloses a semiconductor structure and a manufacturing method thereof. The manufacturing method of the semiconductor structure comprises the following steps: providing a substrate; the substrate is divided into an operation area and a sensing area. The manufacturing method also includes forming a semiconductor element in the operating region and forming a sensing element in the sensing region. The method further includes forming a dielectric layer on the substrate. The manufacturing method includes forming a contact on the dielectric layer. The contact is electrically connected to the semiconductor element. The manufacturing method also includes forming a support layer on the contact and the dielectric layer. The method further includes forming at least one conductive layer on the support layer. The conductive layer includes a first portion electrically connected to the semiconductor element and a second portion having at least one via and disposed on the sensing element. The manufacturing method comprises the following steps: patterning the supporting layer, the dielectric layer and the sensing element through at least one through hole to form an etching groove; the manufacturing method also includes removing the second portion.

Description

technical field [0001] The present invention relates to a semiconductor structure and its manufacturing method, and in particular to a semiconductor structure manufacturing method using a conductive layer as a mask for patterned manufacturing process. Background technique [0002] Cantilever structures are commonly used in devices that require isolation, such as mass sensors, heat sensors, voiceprint sensors, and other sensing devices. In this type of device, the cantilever structure is often used as a support layer or supporting film, allowing it to act as a support for a floating structure. [0003] If the support layer or support film is stretched or compressed excessively, the sensing device will not work properly. Therefore, the thickness of the support layer or the support film, the size of the aperture formed by patterning the support layer or the support film, etc. are key factors affecting the performance of the sensing device. [0004] Existing semiconductor stru...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/32H01L27/16H10N10/01H10N10/17H10N19/00
CPCH10N19/00H10N10/01H10N10/17
Inventor 邱楹翔陈旷举萧鹏展刘汉英
Owner NUVOTON
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