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Power device

A technology of power devices and doped layers, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as insufficient resistance to single event effects

Active Publication Date: 2021-05-11
YANGTZE DELTA REGION INST OF TSINGHUA UNIV ZHEJIANG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of this, this application provides a power device to solve the problem of insufficient ability to resist single event effects in the current terminal transition region

Method used

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Examples

Experimental program
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Effect test

no. 1 example

[0023] see figure 1 , the terminal transition region of the power device 10 includes a first P-type doped layer 101, a second P-type doped layer 102, an N-type doped layer 103, an oxide layer (Oxide) 104, and a polysilicon layer (Poly-Si) 105 .

[0024] The first P-type doped layer 101 is also called a P-type substrate layer, and other structural layers are along a predetermined direction (for example, along figure 1 The direction from bottom to top) is sequentially arranged on the P-type substrate layer.

[0025] The second P-type doped layer 102 is connected to the source S, and is a P-body region of the power device 10 . The doping concentration of the second P-type doped layer 102 is greater than the doping concentration of the first P-type doped layer 101. Herein, the second P-type doped layer 102 may be referred to as a P-type heavily doped layer or a P+ layer. , correspondingly, the first P-type doped layer 101 is also called a P layer.

[0026] The polysilicon laye...

no. 2 example

[0036] see figure 2 The terminal transition region of the power device 20 includes a first P-type doped layer 201 , a second P-type doped layer 202 and a polysilicon layer 204 .

[0037]The first P-type doped layer 201 is also called a P-type substrate layer, and other structural layers are along a predetermined direction (for example, along figure 2 The direction from bottom to top) is sequentially arranged on the P-type substrate layer.

[0038] The second P-type doped layer 202 is connected to the source S, and is a P-body region of the power device 20 . The doping concentration of the second P-type doped layer 202 is greater than the doping concentration of the first P-type doped layer 201 , and herein, the second P-type doped layer 202 may be referred to as a P-type heavily doped layer.

[0039] The polysilicon layer 204 is connected to the gate G and grounded through the gate G. The oxide layer 203 is not connected to any electrodes. The oxide layer 203 and the pol...

no. 3 example

[0044] see image 3 The terminal transition region of the power device 30 includes a first P-type doped layer 301 , an N-type doped layer 302 , an oxide layer 303 and a polysilicon layer 304 .

[0045] The first P-type doped layer 301 is also called a P-type substrate layer, and other structural layers are along a predetermined direction (for example, along image 3 The direction from bottom to top) is sequentially arranged on the P-type substrate layer. The first P-type doped layer 301 is connected to the source S, and is a P-body region of the power device 30 .

[0046] The polysilicon layer 304 is connected to the gate G and grounded through the gate G. The N-type doped layer 302 and the oxide layer 303 are not connected to any electrodes. The orthographic projections of the N-type doped layer 302, the oxide layer 303 and the polysilicon layer 304 are located in the gate bus area. Such as image 3 In the vertical direction shown, the orthographic projections of the N-t...

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Abstract

The invention discloses a power device. In a terminal transition region, the power device comprises a first P-type doped layer, an oxide layer and a polycrystalline silicon layer. The polycrystalline silicon layer is connected with a grid electrode, the power device further comprises a second P-type doped layer and / or an N-type doped layer between the first P-type doped layer and the oxide layer, and the second P-type doped layer is a heavily doped layer and is connected with a source electrode. The power device provided by the invention has relatively high capability of resisting the single event effect in the terminal transition region.

Description

technical field [0001] The present application relates to the technical field of semiconductors, in particular to a power device. Background technique [0002] Power devices are one of the core components of satellite and spacecraft power systems, and play a role in power conversion in power systems. In order to meet the requirements for use in aerospace missions, higher requirements are placed on the radiation resistance of power devices. Therefore, reliable radiation-resistant hardening of power devices is necessary. [0003] The terminal transition region is an indispensable part of the power device, and is used to transmit the gate signal and the gate signal, and there is a polysilicon layer connected to the gate with a large area. In the space radiation environment, the terminal transition region is very sensitive to high-energy particles, and single event effects including single event grid breakdown are very prone to occur. When the single event effect occurs, the ...

Claims

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Application Information

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IPC IPC(8): H01L29/06
CPCH01L29/0623H01L29/0649H01L29/0684
Inventor 晋虎许军陈卓俊张辰晨万欣
Owner YANGTZE DELTA REGION INST OF TSINGHUA UNIV ZHEJIANG