High-frequency circuit driving circuit of parallel MOSFETs
A technology for driving circuits and high-frequency circuits, applied in electrical components, output power conversion devices, etc., can solve problems such as increased loss, large switching loss, and increased switching loss.
Pending Publication Date: 2021-05-18
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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However, the existing drive circuit uses in-line capacitors, which increases the switching loss, and the loss will be further increased as the number of capacitors increases. Therefore, the drive circuit of in-line capacitors is performing high-frequency driving of multiple parallel MOSFETs with high power. Larger switching losses will occur when
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[0047] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0048]The purpose of the present invention is to provide a high-frequency circuit drive circuit for parallel MOSFETs, so as to overcome the technical defect that the drive circuit of the in-line capacitor will produce large switching losses when performing high-frequency drive of multiple high-power parallel MOSFETs. Reduces switching loss during high-frequency driving of high-power multiple MOSFETs connected in parallel.
[0049] In order to make the above ob...
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The invention discloses a high-frequency circuit driving circuit of parallel MOSFETs. The driving circuit comprises a driving signal generation module, a pulse isolation module and a pulse processing module. The output end of the driving signal generation module is connected with the input end of the pulse isolation module, and the driving signal generation module is used for generating two paths of high-frequency driving signals which are opposite in direction, equal in amplitude and provided with dead zones at the same time and outputting the two paths of high-frequency driving signals to the pulse isolation module; the output end of the pulse isolation module is connected with the input end of the pulse processing module, and the output end of the pulse processing module is connected with the grid electrodes of a plurality of MOSFETs which are connected in parallel. According to the invention, the pulse isolation module and the pulse processing module are adopted to drive the plurality of MOSFETs which are connected in parallel, a direct-insertion capacitor is not needed, and the technical defect that a drive circuit of the direct-insertion capacitor can generate relatively large switching loss when carrying out high-frequency drive on the plurality of high-power parallel MOSFETs is overcome; and the switching loss during high-frequency driving of a plurality of high-power parallel MOSFETs is reduced.
Description
technical field [0001] The invention relates to the technical field of power electronics, in particular to a high-frequency circuit driving circuit of parallel MOSFETs. Background technique [0002] MOSFET (Field Effect Transistor) has the advantages of fast switching speed, good high frequency performance, high input impedance, low noise, low driving power, large dynamic range, no secondary breakdown phenomenon and wide safe working area. Based on this, MOSFET is being gradually applied in the field of power electronics technology, and is developing towards high frequency. However, the existing drive circuit uses in-line capacitors, which increases the switching loss, and the loss will be further increased as the number of capacitors increases. Therefore, the drive circuit of in-line capacitors is performing high-frequency driving of multiple parallel MOSFETs with high power. There will be a large switching loss. Contents of the invention [0003] The purpose of the pre...
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IPC IPC(8): H02M1/088
CPCH02M1/088
Inventor 彭咏龙李亚斌马锡浩冯海龙李蕊
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)