Resistive random access memory unit circuit, resistive random access memory and write operation method

Abstract

The invention discloses a resistive random access memory unit circuit, a resistive random access memory and a write operation method, and the resistive random access memory unit circuit comprises a resistive random access memory module which is used for storing data through resistance change, a monitoring module used for monitoring whether the access of the resistive random access memory module is conducted or not and whether resistive random access is completed or not, a time delay module used for starting timing when the monitoring module monitors that the resistive random access memory module completes resistive random access, and controlling to cut off the access of the resistive random access memory module after a preset time, and a communication module controlled by the time delay module to cut off the access of the resistive random access memory module in a delayed manner. The reliability of the existing resistive random access memory can be improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor circuits, in particular to a resistive memory unit circuit, a resistive memory and a writing operation method. Background technique [0002] At present, resistive RAM (RRAM) has become a promising embedded non-volatile memory under advanced process nodes due to its good scalability, low power consumption and good compatibility with logic technology, and is widely used in Consumer electronics, autonomous vehicles, industrial control, and IoT edge devices. [0003] However, the existing writing operation method of the resistive variable memory is to cut off the write voltage immediately after detecting that the resistive variable unit has been successfully written. Although this writing operation method can reduce power consumption and avoid over-operation, it will cause a negative impact on the resistive variable memory. raises reliability issues. Contents of the invention [00...

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Problems solved by technology

[0003]However, the existing writing operation method of the resistive variable memory is to cut off the write voltage immediately after detecting that the resistive variable unit is successfully written. It can reduce power consumption and avoid over-operation, but it will bring reliability problems to resistive memory

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