Thin film transistor, manufacturing method thereof, array substrate and display device

Abstract

The invention provides a thin film transistor, a manufacturing method thereof, an array substrate and a display device, and relates to the technical field of display. A grid electrode, a grid insulating layer, an active layer, a source electrode and a drain electrode are sequentially arranged on the substrate, wherein the source electrode and the drain electrode are arranged on the grid insulating layer and cover part of the active layer, and the active layer is made of an oxide semiconductor; the thin film transistor further comprises a metal nanoparticle layer located on the surface of the side, away from the grid insulating layer, of a channel region. The metal nanoparticle layer is formed above the channel region of the active layer, the anti-etching capability of the channel region is improved, so that when the source electrode and the drain electrode are formed by etching source and drain electrode layer thin films with etching liquid subsequently, the etching liquid is not easy to contact with the channel region due to the fact that the channel region is covered by the metal nanoparticle layer, and therefore, the channel region is not easy to be etched by the etching liquid, so that the damage of the etching liquid to the channel region is prevented, and the performance of the thin film transistor is improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. Background technique [0002] With the continuous development of display technology, MOTFT (Metal Oxide Thin Film Transistor, Metal Oxide Thin Film Transistor, due to its advantages of high mobility, simple manufacturing process, and low cost, has attracted widespread attention. [0003] At present, the main structures used in metal oxide thin film transistors include Back Channel Etch Type (BCE), for BCE type oxide thin film transistors, which etches source and drain electrode layers to form source and drain electrodes. When , the active layer using the oxide semiconductor as the material is easily corroded by the etching solution, thereby affecting the performance of the thin film transistor. Contents of the invention [0004] Some embodiments of the present application provi...

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Problems solved by technology

[0003] At present, the main structures used in metal oxide thin film transistors include Back Channel Etch Type (BCE), for BCE type oxide thin film transistors, which etches the source and drain electrode layer films to form the source and drain When , the active layer using oxide semiconductor as the material is easily corroded by the etching solution, thus affecting the performance of the thin film transistor

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