Detector for directly measuring thermoelectric figure of merit of micro-nano material and preparation process

Abstract

The invention discloses a detector for directly measuring a thermoelectric figure of merit of a micro-nano material and a preparation process, a photoetching-overlay-etching combined process is adopted to prepare a double H-shaped suspended micro-nano electrode as a sample measurement probe, and the influence of heat conduction and heat loss between the electrode and a substrate is eliminated. After a sample is transferred or spin-coated on the electrode, the sample is fixedly connected with the electrode by adopting FIB or conductive and heat-conducting glue, so that the influence of contact resistance and contact thermal resistance is eliminated. Afterwards, the sample and the electrode can be placed in a high-vacuum constant-temperature cabin and connected with an external measuring circuit for measurement, and the electrode can accurately measure thermoelectric parameters such as ZT, conductivity, heat conductivity, Seebeck coefficient and thermal diffusivity of the same sample at a time.

Description

technical field [0001] The invention belongs to the field of thermoelectric materials, and in particular relates to a detector for directly measuring thermoelectric merits of micro-nano materials and a preparation process. Background technique [0002] Thermoelectric material is a kind of non-polluting green energy material that uses thermoelectric effect to directly convert heat energy and electric energy. With the rapid development of nanotechnology, the thin film and fiberization of thermoelectric materials through nanotechnology can not only greatly improve their thermoelectric efficiency, but also can be widely used in the medical field, military field and human body temperature monitoring. The thermoelectric conversion efficiency of thermoelectric materials is generally measured by the thermoelectric figure of merit (ZT), but there is currently no method and equipment that can directly measure the thermoelectric figure of merit in the world, and the thermal parameters ...

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem that the existing technology cannot accurately measure the thermoelectric figure of merit, the present invention proposes a method that can directly and accurately measure the ZT, thermal conductivity, and electrical conductivity of the same micro-nano sample (film or fiber) in situ at one time. and Seebeck coefficient detector and its preparation process

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