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Semiconductor stress sensor

A sensor and corresponding technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc.

Pending Publication Date: 2021-06-08
MELEXIS TECH NV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this case the metal is placed above the membrane, the drift due to the plastic deformation of the metal and again the inversion between the metal lines would still provide for leakage from one resistor to the other path

Method used

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  • Semiconductor stress sensor
  • Semiconductor stress sensor
  • Semiconductor stress sensor

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Embodiment Construction

[0066] The present invention will be described with respect to particular embodiments and with reference to certain drawings but the invention is not limited thereto but only by the claims. The drawings described are only schematic and non-limiting. In the drawings, the size of some of the elements may be exaggerated and not drawn on scale for illustrative purposes. The dimensions and relative dimensions do not correspond to actual reductions to the practice of the invention.

[0067] It is to be noted that the term "comprising", used in the claims, should not be interpreted as being limited to the means listed thereafter; it does not exclude other elements or steps. Accordingly, the term should be interpreted as specifying the presence of stated features, integers, steps or components as referred to, but not excluding the presence or absence of one or more other features, integers, steps or components, or groups thereof. Add to. Therefore, the scope of expressing an "appar...

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PUM

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Abstract

The invention discloses a semiconductor stress sensor. A piezo-resistor sensor (100) comprising: a diffusion (104) of a first conductivity type in a well (118) of an opposite second type, contacts (114) with islands (110) in the diffusion, interconnects (112) with the contacts, a shield (108) covers the diffusion between the contacts and extends over side walls of the diffusion between the contacts, each interconnect covers the diffusion at the corresponding contact and extends over edges of the diffusion, each island is at a side covered by its interconnect,a guard ring (102) of the second type around the diffusion, the shield covers the well between the diffusion and the ring, and the edge of the ring facing the diffusion, if a gap between the shield and the interconnect is present, the ring bridges this gap, and / or the edges of the diffusion are completely covered by the combination of the shield and the interconnects.

Description

technical field [0001] The invention relates to the field of semiconductor stress sensing elements. More specifically, it relates to piezoresistor based strain sensors. Background technique [0002] The semiconductor stress sensing element includes an opposing diffusion path of the first conductivity type defined in a low doped well of the second conductivity type. Sections of the diffusion path that must be stress-sensitive are low-doped, while other parts that should not be stress-sensitive are highly doped or even consist of a metal-silicon alloy. The sheet resistance of the diffusion path is inversely proportional to the doping level. The sheet resistance of the lightly doped diffusion paths is typically between 300 and 5000 ohms / square, while the sheet resistance of the highly doped regions is typically between 20 and 150 ohms / square. When the alloy is formed on the surface of the highly doped region, the sheet resistance even drops to only 1 to 5 ohms / square. Typic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/18H01L23/552H10N30/30H10N30/87H10N30/88
CPCG01L1/18H01L23/552G01L1/2293H10N30/302H10N30/88H10N30/875
Inventor A·J·范德维尔M·拉玛扎尼C·鲁门L·奥特J·维尔高文
Owner MELEXIS TECH NV