Cooling pipe assembly with static electricity releasing function, cooling device and plasma processing equipment

Abstract

The invention relates to a cooling device with a static electricity releasing function and a cooling pipe assembly. The cooling device comprises a substrate, a radio frequency shielding plate, a cooling pipe connector, a high-resistance cooling pipe and a metal cooling pipe. A cooling channel is arranged in the substrate. The radio frequency shielding plate is arranged below the substrate. The cooling pipe connector is arranged in the radio frequency shielding plate, and a first end and a second end of the cooling pipe connector are arranged on the upper surface and the lower surface of the radio frequency shielding plate respectively. One end of the high-resistance cooling pipe is connected with the cooling channel in the substrate, and the other end of the high-resistance cooling pipe is connected with the first end of the cooling pipe connector. One end of the metal cooling pipe is connected with the second end of the cooling pipe connector, and the other end of the metal cooling pipe is grounded. The arc phenomenon caused by static electricity charges is avoided through the high-resistance characteristic of the high-resistance cooling pipe, and on the other hand, the static electricity charges are conducted away through grounding of the cooling pipe, so that the probability of failure of the static electricity chuck is reduced, and the safety of wafer movement is improved.

Description

technical field [0001] The invention relates to devices in the field of semiconductors, in particular to a cooling pipe assembly with the function of releasing static electricity, a cooling device and plasma processing equipment. Background technique [0002] see figure 1 , which is a schematic diagram of a cooling device for a plasma processing apparatus. As shown in the figure, on the substrate 10 is an electrostatic chuck (ESC) 20 , and the electrostatic chuck 20 and the substrate 10 are collectively referred to as an electrostatic chuck device. The substrate is held on the electrostatic chuck. When the plasma etches the substrate, a large amount of heat will be generated on the substrate, therefore, the substrate needs to be cooled. Usually, a cooling channel is provided in the substrate 10 , and the purpose of cooling the electrostatic chuck 20 and thus the substrate is achieved by circulating water or heat transfer fluid in the cooling channel. [0003] In the prio...

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Problems solved by technology

[0003] In the prior art, the insulating rubber hose 30 is connected to the cooling channel in the substrate 10 to provide and recover cooling liquid. When the liquid flows through and scrapes the inner wall of the hose 30, the inner wall is easy to accumulate charges, and these charges are related to radio frequency (RF) There will be a discharge phenomenon between the rods, resulting in damage to the hose 30 and leakage

At the same time, charges will also accumulate on the inner wall of the cooling channel, and these charges will induce charges of opposite polarity on the electrostatic chuck, thereby interfering with the adsorption force of the electrostatic chuck to the substrate and affecting the safety of wafer movement

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