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A kind of non-volatile memory and verification read method thereof

A non-volatile memory technology, applied in the semiconductor field, can solve the problem that volatile memory cannot retain data, and achieve the effect of preventing injection crosstalk and reducing power consumption

Active Publication Date: 2022-01-04
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Volatile memory cannot retain data when power is turned off

Method used

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  • A kind of non-volatile memory and verification read method thereof
  • A kind of non-volatile memory and verification read method thereof
  • A kind of non-volatile memory and verification read method thereof

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Embodiment Construction

[0024] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0025] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0026] In the description of the present application, it should be understood that orientation words such as "front, back, up, down, left, right", "horizontal, vertical, vertical, horizontal" and "top, bottom" etc. indicate the orientation Or positional relationship is generally based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the application and simplifying the descri...

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Abstract

The present invention provides a non-volatile memory, comprising: a storage cell array, including a plurality of storage strings, each storage string includes a plurality of storage cells, a bottom selection transistor and a top selection transistor; a plurality of word lines, respectively connected to the a plurality of memory cells; a string select line connected to said top select tube; a ground select line connected to said bottom select tube; a controller configured to control ground select during a pre-pulse phase prior to a verify read phase The line turns off the bottom selection transistors of the selected memory string and / or the non-selected memory string; the control word line turns on the memory cells in each memory string; the control string selection line makes the top selection transistor in the selected memory string and / or the top select transistors in the non-selected strings are turned off for pre-pulsing.

Description

technical field [0001] The invention mainly relates to semiconductor technology, in particular to a nonvolatile memory and a verification reading method thereof. Background technique [0002] The semiconductor memory may include a volatile memory (VM) and a non-volatile memory (NVM). Volatile storage typically acts as a temporary storage medium, such as RAM, for an operating system or other running programs. Volatile memory cannot retain data when power is turned off. Non-volatile memory is used to store data that needs to be retained for a long time, such as a hard disk. Non-volatile memory retains data in the event of a sudden power loss or shutdown. Examples of non-volatile memory include flash memory (Flash memory), read-only memory ROM, or electrically erasable programmable read-only EEPROM, and the like. [0003] 3D-Nand flash chips have shown wide application value in more and more fields. Such as smart phones, solid state storage, SD Card and USB, etc. The upco...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/08G11C16/10G11C16/26G11C16/34
CPCG11C16/08G11C16/26G11C16/10G11C16/3427
Inventor 许锋李达张安靳磊田瑶瑶王启光
Owner YANGTZE MEMORY TECH CO LTD
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