Unlock instant, AI-driven research and patent intelligence for your innovation.

Manufacturing method of metal interconnection structure

A technology of metal interconnect structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as butterflies, improve device performance, reduce metal interconnect resistance, and improve Rc delay problems Effect

Pending Publication Date: 2021-06-22
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0024] Depend on figure 1 It can be seen that, since the hardness of copper is abo

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of metal interconnection structure
  • Manufacturing method of metal interconnection structure
  • Manufacturing method of metal interconnection structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0053] Such as image 3 Shown is a flowchart of a method for manufacturing a metal interconnection structure according to an embodiment of the present invention; as Figure 4 As shown, it is a schematic diagram of a metal interconnection structure formed by the method for manufacturing the metal interconnection structure according to the embodiment of the present invention; the method for manufacturing the metal interconnection structure according to the embodiment of the present invention includes the following steps:

[0054] Step 1: Provide a front layer structure, in which a groove 204 defining a pattern structure of a metal interconnection structure is formed.

[0055] In the method of the embodiment of the present invention, the metal interconnection structure includes vias (Vias) and metal wirings (Lines). The groove 204 simultaneously defines the graphic structure of the through hole and the metal connection. The groove 204 is formed by overlapping a through hole open...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for manufacturing a metal interconnection structure. The method comprises the following steps: 1, providing a front-layer structure of a groove for defining a graphic structure of the metal interconnection structure; 2, forming a ruthenium layer serving as a diffusion barrier layer; 3, forming a main body layer, wherein the material of the main body layer is one or a combination of more of cobalt, graphene, Cu3Ge, NiGe, CoGe2 and CoAl; 4, performing chemical mechanical grinding to remove the main body layer and the ruthenium layer outside the groove. According to the invention, the metal interconnection resistance can be reduced and is smaller than the Cu interconnection resistance, the Rc delay problem can be improved, and the device performance can be improved; butterfly defects and corrosion defects can be eliminated, and the process can be simplified while the performance is optimized.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for manufacturing a metal interconnection structure. Background technique [0002] In the process of technology nodes above 28nm, Cu is used as the interconnect metal, TaN is used as the diffusion barrier layer (Barrier) of Cu, and Ta is used as the adhesion layer (glue layer) of Cu. The superimposed structure of TaN, Ta and Cu Implement metal interconnect technology. With the reduction of device size, especially after entering the process of technology nodes below 14nm, the electron scattering degree of Cu crystal grains is intensified, resulting in the increase of Cu resistance, which leads to serious Rc delay. Cu interconnection technology will become more and more difficult to meet the technical indicators and reliability of metal interconnection resistance. Therefore, it is more and more urgent to find suitable alternative materials....

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/768
CPCH01L21/76829H01L21/76877H01L21/7684
Inventor 康乐乐张驰
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com