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A Double Electron Beam Extended Interaction Circuit Based on Gap Higher-Order Modes

A technology of extended interaction and double electron injection, applied in the field of dual electron injection extended interaction circuit, can solve problems such as EID power reduction, achieve the effects of increasing power, overcoming the difficulty of starting vibration, and reducing ohmic loss

Active Publication Date: 2021-11-23
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings in the prior art, the dual-electron-beam extended interaction circuit based on the gap high-order mode provided by the present invention solves the problem of power reduction in the development of the existing EID to the millimeter wave and terahertz frequency bands

Method used

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  • A Double Electron Beam Extended Interaction Circuit Based on Gap Higher-Order Modes
  • A Double Electron Beam Extended Interaction Circuit Based on Gap Higher-Order Modes
  • A Double Electron Beam Extended Interaction Circuit Based on Gap Higher-Order Modes

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Embodiment 1

[0049] Such as figure 1 As shown, taking the X direction in the figure as the width direction, the Y direction as the height direction, and the Z direction as the length direction, the dual-electron beam expansion interaction circuit based on the gap high-order mode provided by the present invention includes a metal shell 1, a lateral over-molding dimension Grating, electronic injection channel 4, upper cover plate 7 and lower cover plate 5;

[0050] The transverse overmolding size grating is arranged inside the metal shell 1;

[0051] The transverse overmolding size grating includes several rectangular slot gaps 3 with upper and lower ends open, and the rectangular long side direction of the rectangular slot gap 3 has an overmolding size, and the rectangular slot gaps 3 are arranged in parallel on the metal shell at equal intervals. Inside the body 1, the installation direction is perpendicular to the dimension direction of the overmolding and the opening direction;

[0052...

Embodiment 2

[0075] In this embodiment, the double-injection extended interaction circuit used with the EIO with a working frequency of 220GHz and a voltage of about 22kV in the standing wave working mode is taken as an example. In order to facilitate processing and assembly, such as figure 1 shown in the three-part assembly manner, figure 1 (a) is a 3-grating structure with 11 rectangular slots and gaps designed based on the overmolded structure. The length of each gap is 0.16 mm, and the period length of adjacent gaps is 0.37 mm. The gaps along the X direction are the direction of the overmolded dimension, and the total width is 3.43mm, the height of the gap is 0.8mm, the diameter of the circular hole 2 at the end of the gap in the X direction is 0.32mm, and the height of the circular hole 2 passing through the gap 3 of the rectangular slot is 0.8mm; the two electronic injection channels 4 are circular columns The channels run through the end of the grating structure in the Z direction, ...

Embodiment 3

[0082] According to the design method of the overmode extended interaction circuit of the present invention, a four-note extended interaction circuit with a working frequency of 220 GHz is obtained, and its working mode is TM15-2π, Figure 5 is the electric field distribution of the TM15-2π mode on the XY cross-section, the electric field has five standing wave half-wavelength distribution units along the X direction, and the electron beams are respectively located in the middle position of the X direction, where the electric field is symmetrically distributed at both ends of the half-wavelength electric field region. It has strong injection-wave interaction ability. This embodiment shows that the overmoderated circuit design method of the present invention can support the design of TM1n mode, wherein n is any integer other than 0 and 1, which lays the foundation for the design of more number of electron injection and stable high-order mode working devices, and provides EID De...

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Abstract

The invention discloses a dual-electron-beam expansion interaction circuit based on the high-order mode of the gap. This new type of circuit can generate hundreds of watts to kilowatts of output power in the millimeter-wave or even terahertz frequency band through the interaction with the double-electron beam. The output form can be either pulsed or continuous, and the circuit can obtain more number of standing wave half-wavelength electric field units by increasing the size of the overmode direction, thereby supporting the interaction with more electron beams and larger scale The electronic current and power capacity can be greatly increased to realize high-power coherent radiation in the millimeter wave and terahertz frequency bands.

Description

technical field [0001] The invention belongs to the field of microwave, millimeter wave and terahertz vacuum electronic devices, and in particular relates to a dual-electron beam expansion interaction circuit based on gap high-order modes. Background technique [0002] Vacuum electronic devices are an important means of realizing high-power millimeter-wave and terahertz radiation sources, and occupy an important position in military and civilian fields. Today, such devices are mainly developed in the direction of high frequency, high power, high efficiency, high reliability, low voltage, compactness and miniaturization. Extended interaction devices (Extended interaction devices, EIDs) include extended interaction klystrons and There are two types of oscillators. The interaction circuit adopted by this type of device combines the characteristics of klystron cavity gain, high peak power and slow wave structure broadband of traveling wave tube, so it has the advantages of high ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J25/11H01J23/09H01J23/16H01J23/14
CPCH01J23/09H01J23/14H01J23/16H01J25/11
Inventor 毕亮杰殷勇李海龙王彬蒙林
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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