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Wafer cleaning method

A wafer and cleaning fluid technology, applied in the field of parts cleaning, can solve the problems of poor semiconductor processing and use, affect the wafer processing effect, and it is difficult to completely remove metal impurities and organic substances, so as to achieve the effect of improving processing performance

Inactive Publication Date: 2021-06-29
SAE TECH DELEVOPMENT DONGGUAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, the formation of metal impurities affects the processing effect of the wafer, and if it is serious, it will cause adverse consequences for the subsequent processing and use of semiconductors.
The current cleaning methods are difficult to completely remove the metal impurities and organic matter on the surface of the hospital

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] An embodiment of the cleaning method of the wafer described in the present invention, the cleaning method of the wafer described in the present embodiment comprises the following steps:

[0020] (1) Soak the wafer to be cleaned in the first cleaning solution at 28°C for 20 minutes; the first cleaning solution contains the following components in volume percentage: 6% sulfuric acid, 5% hydrofluoric acid and the balance water;

[0021] (2) Place the wafer cleaned in step (1) in ultrapure water with a resistivity > 20MΩ·cm at 80°C for 30 minutes;

[0022] (3) Place the wafer cleaned in step (2) into the second cleaning solution at 28° C. for 25 minutes. The second cleaning solution contains the following components in volume percentage: 4% hydrofluoric acid, hydrochloric acid 10% and the balance water;

[0023] (4) Place the wafer cleaned in step (3) in ultrapure water at 80° C. with a resistivity > 20 MΩ·cm for 30 minutes, dry, and finish cleaning.

Embodiment 2

[0025] An embodiment of the cleaning method of the wafer described in the present invention, the cleaning method of the wafer described in the present embodiment comprises the following steps:

[0026] (1) Soak the wafer to be cleaned in the first cleaning solution at 25°C for 25 minutes; the first cleaning solution contains the following components in volume percentage: 7% sulfuric acid, 5% hydrofluoric acid and the balance water;

[0027] (2) Place the wafer cleaned in step (1) in ultrapure water with a resistivity > 20MΩ·cm at 85°C for 20 minutes;

[0028] (3) Place the wafer cleaned in step (2) in the second cleaning solution at 25° C. for 30 minutes. The second cleaning solution contains the following components in volume percentage: 5% hydrofluoric acid, hydrochloric acid 10% and the balance water;

[0029] (4) Place the wafer cleaned in step (3) in ultrapure water at 85° C. with a resistivity > 20 MΩ·cm for 20 minutes, dry, and finish cleaning.

Embodiment 3

[0031] An embodiment of the cleaning method of the wafer described in the present invention, the cleaning method of the wafer described in the present embodiment comprises the following steps:

[0032] (1) Soak the wafer to be cleaned in the first cleaning solution at 30°C for 15 minutes; the first cleaning solution contains the following components in volume percentage: 6% sulfuric acid, 5% hydrofluoric acid and the balance water;

[0033] (2) Place the wafer cleaned in step (1) in ultrapure water with a resistivity > 20MΩ·cm at 75°C for 40 minutes;

[0034] (3) Place the wafer cleaned in step (2) into the second cleaning solution at 30° C. for 20 minutes. The second cleaning solution contains the following components in volume percentage: 3% hydrofluoric acid, hydrochloric acid 10% and the balance water;

[0035] (4) Place the wafer cleaned in step (3) in ultrapure water at 75° C. with a resistivity > 20 MΩ·cm for 40 minutes, dry, and finish cleaning.

[0036] More than 9...

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PUM

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Abstract

The invention discloses a wafer cleaning method which comprises the following steps: (1) cleaning a wafer to be cleaned with a first cleaning solution which is a mixed solution of sulfuric acid, hydrofluoric acid and water; (2) cleaning the wafer cleaned in the step (1) with water; (3) cleaning the wafer cleaned in the step (2) in a second cleaning solution, wherein the second cleaning solution is a mixed solution of hydrofluoric acid, hydrochloric acid and water; and (4) cleaning the wafer cleaned in the step (3) with water, drying and finishing cleaning. According to the cleaning method of the wafer, metal impurities and organic matters on the surface of the wafer can be thoroughly cleaned through cleaning of the first cleaning solution and the second cleaning solution, and the subsequent processing performance is improved.

Description

technical field [0001] The invention relates to a method for cleaning parts, in particular to a method for cleaning wafers. Background technique [0002] In the production of wafers, the surface is often contaminated with various volatiles, forming impurities. In particular, the formation of metal impurities affects the processing effect of the wafer, and if it is serious, it will cause adverse consequences to the subsequent processing and use of semiconductors. The current cleaning methods are difficult to completely remove the metal impurities and organic matter on the surface of the hospital. Contents of the invention [0003] The object of the present invention is to provide a method for cleaning wafers by overcoming the shortcomings of the prior art. [0004] In order to achieve the above object, the technical solution adopted by the present invention is: a method for cleaning a wafer, comprising the following steps: [0005] (1) cleaning the wafer to be cleaned wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02B08B3/08
CPCB08B3/08H01L21/02057
Inventor 彭忠华
Owner SAE TECH DELEVOPMENT DONGGUAN