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Method and device capable of effectively reducing SiC single crystal defects

A single crystal and defect technology, applied in the field of effectively reducing SiC single crystal defects, can solve problems such as low utilization rate of SiC raw materials

Inactive Publication Date: 2021-07-06
赵丽丽
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to overcome the defect of low raw material utilization rate in the existing SiC preparation process, the present invention provides a method and device that can effectively reduce the defects of SiC single crystal, and improve the quality and raw material of SiC single crystal by changing the existing preparation method Utilization

Method used

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  • Method and device capable of effectively reducing SiC single crystal defects
  • Method and device capable of effectively reducing SiC single crystal defects

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Embodiment 2

[0034] Embodiment 2 is a method for preparing a SiC single crystal using the device described in Embodiment 1, which specifically includes the following steps:

[0035] S1. First place the annular graphite filter screen 12 vertically in the center of the crucible main body 6, then fill the silicon carbide raw material 1 7 into the annular graphite filter screen 12, and then fill the silicon carbide raw material 2 8 into the annular graphite filter screen 12 The outer periphery is flattened, and then the shroud 4 is placed on the boss of the inner wall of the crucible main body 6, and then the graphite sheet 3 is respectively pasted on the circumferential inner wall of the top opening of the crucible main body 6 and the crucible cover on the outer periphery of the seed crystal holder 1, Finally, paste the seed crystal 2 on the seed crystal support 1 , and close the crucible lid on the crucible main body 6 .

[0036] S2. After wrapping the insulation material 5 on the outside of...

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Abstract

The invention relates to a method and a device capable of effectively reducing SiC single crystal defects, belongs to the field of crystal preparation, and aims to overcome the defect of low raw material utilization rate in the existing SiC preparation process. The device comprises a crucible, a seed crystal and a flow guide cover, the crucible comprises a crucible cover and a crucible main body, a raw material area is arranged in the crucible main body, the flow guide cover is installed on the inner wall of the crucible body through a boss and located above the raw material area, the seed crystal is fixed to the inner side of the crucible cover and located in an opening in the top of the flow guide cover, the raw material area is filled with a first silicon carbide raw material and a second silicon carbide raw material which are different in particle size, the first silicon carbide raw material and the second silicon carbide raw material are separated by an annular graphite filter screen, the first silicon carbide raw material is positioned inside the annular graphite filter screen, and the second silicon carbide raw material is positioned on the periphery of the annular graphite filter screen; and graphite flakes are arranged on the outer side of the flow guide cover and are adhered to the inner walls of the crucible main body and the crucible cover. The raw material utilization rate is improved by filling silicon carbide raw materials with different pore diameters.

Description

Technical field: [0001] The invention belongs to the technical field of crystal preparation, and in particular relates to a method and a device capable of effectively reducing SiC single crystal defects. Background technique: [0002] The physical vapor transport method PVT is the mainstream preparation method of wide bandgap semiconductor materials. Most silicon carbide single crystals grown by PVT methods are heated by induction heating. However, due to the current thermal field and the design of the crucible structure, the quality of the prepared crystals is not good, the growth is not uniform, and the thickness of the crystals cannot meet the market demand. In addition, due to the limitation of the principle of induction heating, the utilization rate of raw materials is low. Invention content: [0003] In order to overcome the defect of low raw material utilization rate in the existing SiC preparation process, the present invention provides a method and device that can...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/06C30B29/36
CPCC30B23/002C30B23/066C30B29/36
Inventor 不公告发明人
Owner 赵丽丽
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