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Semiconductor integrated circuit

An integrated circuit and protection circuit technology, applied in the field of semiconductor integrated circuits, can solve the problems of increasing input protection circuit constraints, increasing input terminal capacitance, large input protection circuit, etc.

Inactive Publication Date: 2003-12-10
NEC ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The result is a large input protection circuit, which in turn increases chip area
[0008] The second problem is that as mentioned above, as the area of ​​the input protection circuit increases, the diffusion layer capacitance and gate capacitance of the input protection element increase, and the input terminal capacitance also increases.
[0009] The third problem is that because the resistance on the discharge path of the input protection circuit is particularly small, it is convenient for current to flow, and the design of the circuit increases the restriction that the input protection circuit must be configured near the power supply voltage line and the ground line.

Method used

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  • Semiconductor integrated circuit
  • Semiconductor integrated circuit
  • Semiconductor integrated circuit

Examples

Experimental program
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Embodiment 1

[0022] Fig. 2(a) is a circuit diagram of the transistor level of the first embodiment (Embodiment 1) of the present invention. Referring to FIG. 2(a), the LSI of the embodiment has an inverter 5 input to the primary stage and its output signal is applied as an input to an internal circuit 3, a resistor R5, and a switching element 4.

[0023] The input primary inverter 5 is connecting the pMOS transistor Q p1 And nMOS transistor Q N2 Inverter of the CMOS transistor structure formed by connecting the gates in common while being connected in series. A resistor R5 is connected between the input point of the inverter 5 (the common gate of the two MOS transistors) and the input terminal 7.

[0024] The resistor R5 is composed of a polysilicon layer, and is formed at the same time when the gates of the MOS transistors constituting the primary inverter 5 and the internal circuit 3 are formed.

[0025]The internal circuit 3 usually contains a very large number of logic gate circuits. FIG. ...

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Abstract

A semiconductor integrated circuit with an input protection circuit, a switch element that is switched according to a voltage applied to both terminals is provided between a wiring for connecting an input terminal and the input point of an input initial stage inverter and the output point of either logic gate for constituting an internal circuit. When an overvoltage is applied to the external input terminal, the switch device becomes the conducting condition so that the electric charge of the overvoltage applied to the external input terminal, is discharged through a MOS transistor constituting the logic gate within the internal circuit, to a power supply voltage line or a ground potential line which is laid within the internal circuit for supplying a power supply voltage or a ground potential transistor.

Description

Technical field [0001] The present invention relates to a semiconductor integrated circuit, and more particularly, to a semiconductor integrated circuit having an input protection circuit capable of discharging a surge voltage such as an electrostatic overvoltage applied to an external terminal at a power supply potential point or a ground potential point. Background technique [0002] Use 5, 6, or 7 to describe this type of input protection circuit previously used for input protection of a semiconductor integrated circuit (LSI). Figure 5 It is a circuit diagram of one of the previous input protection circuit examples (existing example 1). Refer to Figure 5 , On the power supply voltage side, a P-channel MOS transistor (PMOS transistor) Q is provided as a protection element for discharging current p3 . Transistor Q p3 A diode is used to connect the gate and the source, the gate and the source are connected to the power supply voltage line 1, and the drain is connected to the ex...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/04H01L21/822H01L21/8238H01L27/02H01L27/092H03F1/52
CPCH01L27/0266H01L2924/0002H03F1/523H01L27/0255H01L2924/00H01L27/04
Inventor 菅宏一郎
Owner NEC ELECTRONICS CORP