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Tumor marker sensor based on fin field effect transistor fabrication process

A tumor marker, fin field effect technology, applied in the field of biosensors, can solve the problems of high cost, low yield, cell destruction, etc., and achieve the effects of improving the accuracy rate, low industrialization, and low cost

Active Publication Date: 2022-05-27
GRIMAT ENG INST CO LTD
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  • Application Information

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Problems solved by technology

However, most silicon nanowire field-effect transistor sensors are manufactured using the electron beam direct writing process, which requires a large volume of support materials to produce nanowires, with low yield and high cost, which is not suitable for mass production and manufacturing, and the detection process irreversible damage to cells

Method used

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  • Tumor marker sensor based on fin field effect transistor fabrication process
  • Tumor marker sensor based on fin field effect transistor fabrication process

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Experimental program
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Embodiment

[0039] Prepare using the above method Figure 1 Tumor marker sensor showing structural characteristics, where the length of silicon nanowires is about 50 μm and the width is about 30 nm. The gold electrode is 2mm long and 100μm wide, the spacing between the electrodes is 30μm, and the high k-gate dielectric layer is HfO 2 layer, which is 10 nm thick.

[0040] Prepare a 50 ng / mL alpha-fetoprotein (AFP) solution and a 100 ng / mL γ-glutamyl transpeptidase-2 (GGT2) mixed solution, inject 1 μL of mixed solution dropwise into the inlet of the microfluidic channel, apply negative pressure at the outlet, slowly flow the mixed protein solution through the silicon nanowire region, and record the detection electrical signal using the Keithley 4200 semiconductor analyzer. The resulting electrical signal such as Figure 2 As shown, the leakage current signals of AFP and GGT2 are represented by black curves and gray curves, respectively. As the mixed solution is injected into the microfluidic nano...

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Abstract

The invention discloses a tumor marker sensor based on a fin field effect transistor manufacturing process. The tumor marker sensor adopts a CMOS-compatible "top-down" nanowire structure, including: Si nanowires formed by fin field effect transistor manufacturing process on SOI substrate; photolithography, magnetron sputtering The gold electrode prepared by irradiation and stripping process; the surface of the tumor marker sensor has a high-k gate dielectric layer formed by atomic layer deposition; the microfluidic multi-channel is built on the surface of the sensor by photolithography process and alignment technology. The tumor marker sensor of the invention can quickly, accurately and highly sensitively detect the mixed protein solution, and the tumor marker sensor has the advantages of miniaturization, integration, low manufacturing cost, recyclability and the like.

Description

Technical field [0001] The present invention relates to a fin-based field effect transistor (FinFET) manufacturing process of tumor marker sensor, belonging to the field of biosensor technology. Background [0002] With the increase in the incidence and mortality of malignant tumors, it has become the most important cause of death in China and a public health problem that has attracted much attention. Timely and efficient early diagnosis can achieve early detection and treatment of tumors, significantly improving the survival rate of patients, and is also one of the most challenging problems in clinical medicine. Although modern imaging technology has become an important means of tumor diagnosis, tumor molecular markers still have irreplaceable clinical application value. Molecular technology can provide an important scientific basis for tumor prevention and control, early diagnosis, efficacy observation and prognosis evaluation of tumors by molecular technology, such as the expr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/66B81C1/00B81B7/00G01N33/574
CPCH01L29/785H01L29/66795B81C1/00119B81B7/00G01N33/57484
Inventor 魏千惠张青竹
Owner GRIMAT ENG INST CO LTD
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