Heavily doped substrate with mark points and preparation method and application thereof

A heavily doped, substrate technology, used in final product manufacturing, sustainable manufacturing/processing, printing, etc., can solve problems such as inability to meet accuracy, and achieve the effects of reducing surface, increasing short-circuit current, and reducing line width

Active Publication Date: 2021-07-16
CSI CELLS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is positioned through the edge-finding mechanism of the printing machine, which is applicable to thick front-side silver grid lines, but for ultra-fine front-side silver grid lines, this accuracy cannot meet the requirements.

Method used

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  • Heavily doped substrate with mark points and preparation method and application thereof
  • Heavily doped substrate with mark points and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0092] This embodiment provides a method for preparing a hetero-doped substrate with a MARK point, comprising: first use laser (532 nm of laser wavelength, 40 μm of the laser light diameter) to four MARK points, this The location of the MARK point is consistent with the subsequent ink printing net and the Mark position on the positive silver slurry screen. Secondly, it can be seen, the naked eye can be seen in the Mark point, and the post-four steps are used to spread, the first step, at the same time Oxygen in the amount of 500 sccm and 500sccm carrying the conditions carrying nitrogen having a doped stem-doped trichlorophous phosphorus, the deposition is 780 ° C, the deposition time is 800s, step 2, at the same time to enter the flow rate of 100 sccm Under the conditions of oxygen, the advancement of the advancement of 860 ° C, the advancement of 2000s, the third step, is carried out at the same time to enter the flow rate of 400 sccm oxygen and 400 sccm is doped with doped stem...

Embodiment 2

[0103] This embodiment provides a method for preparing a hetero-doped substrate with a MARK point, comprising: first use laser (550 nm of laser wavelength, a spot diameter of the laser) to four MARK points, this The location of the MARK point is consistent with the subsequent ink printing net and the Mark position on the positive silver slurry screen. Secondly, it can be seen, the naked eye can be seen in the Mark point, and the post-four steps are used to spread, the first step, at the same time Oxygen in the amount of 300sccm and 300sccm carrying the conditions carrying nitrogen having a doped stem-doped trichlorophoside, the temperature of 700 ° C, the deposition is 1000 s, the second step, the amount of oxygen in the through flow of 50sccm Under the conditions, the advancement of the advanced temperature is 800 ° C, the advancement of 2200s, the third step, is carried out under the condition of 300 sccm oxygen and 300 SCCM, the second The temperature of the secondary depositio...

Embodiment 3

[0114] This embodiment provides a method of preparing a hetero-doped substrate with a MARK point, comprising: first use laser (520 nm of laser light, 520 μm of the laser light diameter), four MARK points, The location of this Mark point is consistent with the mark position on the subsequent ink printing screen and the positive and silver slurry screen. Second, it can be seen, the naked eye can be seen, and the post-four steps are score, the first step, at the same time Oxygen induced by 700 sccm and 700sccm carrying the conditions of nitrogen with doped stem-doped trichlorophoside, the deposition is 850 ° C, the deposition is 600s, the second step, in the access flow of 150sccm Under the conditions of oxygen, the advanced temperature is 900 ° C, the advancement of 1800s, the third step, at the same time accephinated the flow rate of 500 sccm oxygen and 500sccm, is carried out under conditions of doped source of phosphorus, The temperature of the secondary deposition is 850 ° C, th...

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Abstract

The invention provides a heavily doped substrate with mark points and a preparation method and application thereof. The preparation method of the heavily doped substrate with the mark points comprises the following steps of carrying out mark point marking, texturing treatment and diffusion treatment on a substrate to obtain the heavily doped substrate with the mark points, recognizing and grabbing the printing position according to the mark points of the heavily doped substrate with the mark points, and completing subsequent ink printing and positive silver grid line printing. High-precision alignment between two times of printing is completed only through one-time mark points, the width of an ink mask can be effectively reduced, the line width of a heavily doped region can be reduced, the surface J0 can be reduced, and the printing alignment precision requirement of the superfine front silver grid line can be met, the mass production application of the superfine front silver grid line is realized, and the short-circuit current is effectively improved, so that the light conversion efficiency of the solar cell is improved.

Description

Technical field [0001] The present invention belongs to the field of printing, which relates to a hetero-doped substrate with a MARK point and a preparation method thereof, in particular, to a method of preparing a supported substrate with a MARK point, with a MARK point Doped substrate, a selection method, high-efficiency, selective emitter battery, and high efficiency return selective emitter battery and application. Background technique [0002] Print is an important process link in multicolor printing, and the quality of printing is often related to the impact of the key. At the same time, automatic printer has always been a key area of ​​research and development in printing equipment industry. In recent years, machine visual theory and technology have also been rapidly developed, and it is applied to printing printed precision identification testing, which in turn, there is an inevitable trend to develop printing sets. [0003] Take the film circuit board production as an ex...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/068B41M1/12
CPCH01L31/1804H01L31/068B41M1/12Y02P70/50
Inventor 陈瑶
Owner CSI CELLS CO LTD
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