Nonvolatile memory programming method
A technology of non-volatile memory and programming method, applied in static memory, read-only memory, information storage, etc., can solve problems such as reading errors, and achieve the effect of improving reliability and increasing readout margin
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Embodiment 1
[0027] Such as figure 2 As shown, a non-volatile memory programming method requires high reliability programming for high reliability memory, and high reliability programming includes the following steps:
[0028] 1. Perform standard erasing of the memory cells to be programmed, so that each memory cell becomes erased state 1;
[0029] 2. After the programming data is converted into coded data by adopting the coding method of 1-bit data corresponding to 2-bit differential coded data, standard programming is performed on the storage unit to be programmed in the memory, and the data 1 in the programming data corresponds to a pair of differentially coded data 10, Data 0 in the programming data corresponds to a pair of differentially encoded data 01, and each pair of differentially encoded data corresponds to a pair of memory cells. Standard programming is to program the charge storage layer of the memory cell corresponding to data 0 with standard programming voltage and standard...
Embodiment 2
[0034]Based on the non-volatile memory programming method of Embodiment 1, when reading data from a memory after high-reliability programming, a read voltage is applied to the word line and the bit line of the memory cell of the memory, and each pair of differential encoded data corresponds to The read current of a pair of memory cells is sent to the read circuit through the bit line, and the read circuit compares the read current of the two memory cells to judge the stored data;
[0035] The read current of a pair of memory cells corresponding to a pair of differentially encoded data, if the difference between the read current of the previous memory cell minus the read current of the next memory cell is greater than the set threshold, then read data 1; if If the difference between the read current of the next memory cell and the read current of the previous memory cell is greater than the set threshold, data 0 is read.
[0036] For example, the threshold value is set to 5uA, ...
Embodiment 3
[0039] Based on the non-volatile memory programming method of embodiment one or two, for high reliability requirements storage memory is carried out high reliability erasing, high reliability erasing comprises the following steps:
[0040] (1). Carry out standard erasing to the storage unit to be erased of the memory, so that each storage unit becomes erasing state 1;
[0041] (2) To each memory cell of erasing state, carry out interval standard programming, that is, make each memory cell change into erasing state memory cell and standard programming state memory cell successively by being all erased states.
[0042] For example, standard erasing is performed on the memory cells to be erased so that each memory cell becomes erased state 1, and the states of the 16 memory cells are 11111111_11111111; The state of the storage unit is 10101010_10101010.
[0043] Preferably, before the above step (1), the memory cells to be erased are pre-programmed, so that the charge storage la...
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