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Operation method of eeprom storage unit

The technology of a storage unit and operation method, which is applied in the field of storage, can solve the problems of low durability of EEPROM storage units and achieve the effect of improving durability

Active Publication Date: 2017-03-29
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The invention solves the problem that the traps in the EEPROM storage unit cause low durability of the EEPROM storage unit

Method used

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  • Operation method of eeprom storage unit
  • Operation method of eeprom storage unit
  • Operation method of eeprom storage unit

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Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] right figure 1When the shown EEPROM memory cell M0 performs an erase operation, the electrons in the first floating gate 105 are attracted to the first floating gate 105 through the tunnel effect between the first diffusion region 101 The first diffusion region 101 ; attracts electrons in the second floating gate 107 to the second diffusion region 102 through the tunnel effect between the second floating gate 107 and the second diffusion region 102 . In order to erase the electrons stored in the first floating gate 105 and the second floating gate 107 , a high voltage needs to be applied to each electrode of the EEPROM memory cell M0 . Under the effect of high voltage, a strong electric field is formed between the first floating gate 105 and the first diffusion region 101 , and a strong electric field is formed between the second floating gate 107 and the second diffusion region 102 . The strong electric field will cause a lattice shift between the floating gate and th...

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Abstract

The invention discloses an operation method of an EEPROM (electrically erasable programmable read-only memory) unit. The EEPROM unit comprises an intermediate electrode, a main memory bit and a secondary memory bit, wherein the main memory bit comprises a first diffusion zone and a first control grid, the secondary memory bit comprises a second diffusion area zone and a second control grid; the operation method of the EEPROM unit comprises the following steps: when performing the read operation on the EEPROM unit, exerting a first read voltage to the intermediate electrode, exerting a second read voltage to the first control grid, exerting a third read voltage to the second control grid and the first diffusion zone, and connecting the second diffusion zone with a read circuit. According to the operation method of the EEPROM unit provided by the invention, the durability of the EEPROM unit is improved.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to an operation method of an EEPROM memory unit. Background technique [0002] Electrically Erasable Programmable Read-Only Memory (EEPROM, Electrically Erasable Programmable Read-Only Memory) is a semiconductor storage device with a byte as the minimum unit of modification, which can be electronically rewritten multiple times. Compared with Erasable Programmable Read-Only Memory (EPROM, Erasable Programmable Read-Only Memory), EEPROM does not need to be irradiated with ultraviolet rays or removed, and a specific voltage can be used to erase the information on the chip for writing new data. Due to the excellent performance of EEPROM and the convenience of online operation, it is widely used in BIOS chips and flash memory chips that need to be frequently erased, and gradually replaces some random access memory (RAM, Random Access Memory) chips that require power-off retention. , and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/02G11C16/26
Inventor 杨光军胡剑
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP