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Exposure and development method of metal box dam, metal box dam and ceramic substrate

A metal dam, exposure and development technology, used in microlithography exposure equipment, photolithographic process exposure devices, electrical components, etc., can solve the problem of conforming to standards and other issues

Pending Publication Date: 2021-07-30
国瓷赛创电气(铜陵)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to meet the requirement of exposing and developing the dams with more than three layers of laminated films. The current exposure and developing operation process cannot meet the standard in appearance. Therefore, a method for exposing and developing metal dams is provided. The fabricated metal dam and ceramic substrate

Method used

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  • Exposure and development method of metal box dam, metal box dam and ceramic substrate
  • Exposure and development method of metal box dam, metal box dam and ceramic substrate
  • Exposure and development method of metal box dam, metal box dam and ceramic substrate

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Embodiment Construction

[0041] The technical solutions in the embodiments of the present invention are clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments without creative efforts by those skilled in the art fall within the protection scope of the present invention.

[0042] The dam parameters targeted by the present invention are as follows: front copper structure: 65+450+200, bottom copper structure: 65+30, standard total thickness: 1310 μm; each PNL (120*120mm)=2set=2*377pcs.

[0043] Such as Figure 3-5 As shown, after adjusting the parameters of exposure and development in the present invention, there is no exposure failure, slight side erosion, acceptable, and the appearance is ok. These adjustments are not taught in the prior art, and making these adjustments requires cr...

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Abstract

The invention discloses an exposure and development method of a metal box dam and a metal box dam manufactured by the same, and a ceramic substrate. The box dam pressed with at least three layers of films is placed on an exposure platform of an exposure machine, shading cloth is added on the exposure platform to start exposure, the exposure energy is 1000 mj / cm < 2 >, the number of times of development is two, the development speed is 0.75 m / min, and the height of a filler strip is 1.2 mm. The method has the beneficial effects that the exposure and development process is improved, and the exposure time, the height of the filler strip, the number of times of development and the development speed are adjusted, so that a satisfactory development effect can be realized on a box dam with multiple layers, such as six layers, of pressed films.

Description

technical field [0001] The invention relates to the technology in the field of microelectronic packaging, in particular to an exposure and development method for a metal dam and a metal dam and a ceramic substrate prepared therefrom. Background technique [0002] At present, sensors, crystal oscillators, resonators, power semiconductors, lasers and other optoelectronic devices that require high air tightness and reliability are generally packaged with ceramic substrates. The common structure is a ceramic with a circuit layer. A metal dam is set on the base, and the metal dam and the ceramic base form a sealed chamber, which is used to place device chips, fill packaging glue, inert gas or directly vacuumize, so as to achieve high-reliability hermetic packaging. [0003] In the manufacturing process of metal dams, it includes lamination-exposure-development-electroplating-polishing-mid-measurement-molding-finished product, in which lamination is the foundation, and the quality...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48H01L23/13H01L23/15G03F7/20
CPCH01L21/4803H01L21/4807H01L23/13H01L23/15G03F7/20
Inventor 王军陈文阳于正国
Owner 国瓷赛创电气(铜陵)有限公司
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