Insulating film and printed circuit board including same
A technology for printed circuit boards and insulating films, which is applied to printed circuits, printed circuits, printed circuit manufacturing, etc., and can solve the problems of increased radio frequency signal loss and other issues
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example 1
[0091] UV-O is performed on the surface of the insulating layer including the liquid crystal polymer 3 deal with. The insulating layer was immersed in Cu containing 4ml / L of allylamine and 7.5ppm of Cu 2+ copper (II) solution for one hour. Electroless plating and electroplating with thicknesses of 0.5 μm and 20 μm, respectively, were sequentially performed on the surface of the immersed insulating layer. Heat treatment was performed at a temperature of 290° C. for 15 minutes, and then the bonding force between the insulating layer and the metal layer was measured.
[0092] The atomic content of nitrogen contained in the surface bonding layer formed by Inventive Example 1 was 1.48 atomic %, the atomic content of oxygen was 17.04 atomic %, and the ratio of "a" to "b" (a / b) was about 0.09, wherein "a" is the atomic content of nitrogen, and "b" is the atomic content of oxygen.
example 2
[0094] Immerse the insulating layer in the solution for two hours. Other conditions are the same as those in Inventive Example 1.
[0095] The atomic content of nitrogen contained in the surface bonding layer formed of Inventive Example 2 was 1.62 atomic %, the atomic content of oxygen was 16.67 atomic %, and the ratio of "a" to "b" (a / b) was about 0.10, wherein "a" is the atomic content of nitrogen, and "b" is the atomic content of oxygen.
example 3
[0097] Substitute for Cu at a concentration of 7.5ppm 2+ Copper ions (II), the concentration of Ce at 7ppm 4+ Cerium ions (IV) were added to the solution in which the insulating layer was impregnated, and the insulating layer was immersed in the solution for one hour. Other conditions are the same as Inventive Example 1.
[0098] The atomic content of nitrogen contained in the surface bonding layer formed by Inventive Example 3 was 1.46 atomic %, the atomic content of oxygen was 15.40 atomic %, and the ratio of "a" to "b" (a / b) was about 0.09, wherein "a" is the atomic content of nitrogen, and "b" is the atomic content of oxygen.
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