Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-permeability friction nano sensor and preparation method thereof

A nano-sensor and high-permeability technology, which is applied in the direction of sensors, friction generators, and electric/magnetic devices to transmit sensing components, etc., can solve the problems of non-breathability, poor adhesion performance, and long single-use time. Achieve the effects of wearing convenience, avoiding inflammation and allergic symptoms, and enhancing signal acquisition and transmission capabilities

Active Publication Date: 2021-08-03
HUAZHONG UNIV OF SCI & TECH
View PDF12 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the long single use time of this electronic device, its own shortcomings such as non-breathability and poor adhesion performance are gradually exposed, which has become a key factor restricting the subsequent development of flexible wearable electronic devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-permeability friction nano sensor and preparation method thereof
  • High-permeability friction nano sensor and preparation method thereof
  • High-permeability friction nano sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0036] see figure 2 , the present invention also provides a preparation method of a high-permeability nanosensor, the preparation method mainly includes the following steps:

[0037] S1, preparation of tribological layer electrospinning solution: firstly, soluble PI powder was dissolved in organic solvent dimethylacetamide (DMAc), and then magnetically stirred at room temperature to obtain electrospinning solution. Wherein, the stirring time is preferably 2h-4h, and the concentration of the prepared PI electrospinning solution is preferably 20wt%-25wt%.

[0038]S2, preparation of friction layer film: use high-voltage electrospinning process, preferably DC voltage 8-10kV, receiving distance 5-15cm, injection flow range of spinning solution 8000-10000nl / min, relative humidity 60%, use 1ml syringe, inner diameter 0.51mm, outer diameter 0.82mm general stainless steel dispensing needle, prepare a layer of PI film on single-sided conductive ITO glass; then remove the film and keep...

Embodiment 1

[0048] S1, preparation of friction layer electrospinning solution: first dissolve soluble PI powder in the organic solvent dimethylacetamide (DMAc), and then perform magnetic stirring at room temperature, the stirring time is preferably 2h, the prepared PI electrospinning solution The concentration of is preferably 20wt%;

[0049] S2, preparation of friction layer film: use high-voltage electrospinning process, preferably DC voltage 8kV, receiving distance 10cm, injection flow rate 8000nl / min, relative humidity 60%, use 1ml syringe, general stainless steel point with inner diameter of 0.51mm and outer diameter of 0.82mm Glue needles, prepare a layer of PI film on the single-sided conductive ITO glass; then remove the film and hold it at 60°C for 4 hours to cure the PI material layer, and obtain a friction layer film with a thickness of 0.1mm;

[0050] S3, preparing the friction layer: use a blade to cut a piece of film with a relatively uniform thickness and a surface area of ...

Embodiment 2

[0058] S1, preparation of friction layer electrospinning solution: first dissolve soluble PI powder in the organic solvent dimethylacetamide (DMAc), and then perform magnetic stirring at room temperature, the stirring time is preferably 3h, the prepared PI electrospinning solution The concentration of is preferably 22wt%;

[0059] S2, preparation of friction layer film: use high-voltage electrospinning process, preferably DC voltage 9kV, receiving distance 12cm, injection flow rate 9000nl / min, relative humidity 60%, use 1ml syringe, general stainless steel point with inner diameter of 0.51mm and outer diameter of 0.82mm Glue needles, prepare a layer of PI film on the single-sided conductive ITO glass; then remove the film and hold it at 60°C for 5 hours to cure the PI material layer, and obtain a friction layer film with a thickness of 0.15mm;

[0060] S3, preparing the friction layer: use a blade to cut a piece of film with a relatively uniform thickness and a surface area of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
widthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the related technical field of flexible wearable electronic devices, and discloses a high-permeability friction nano sensor and a preparation method thereof. The nano sensor comprises a packaging layer, an electrode layer, a friction layer and a microstructure layer which are arranged from top to bottom, wherein the friction layer is made of PI and is prepared by adopting a one-step electrostatic spinning process; the friction nanometer sensor further comprises an adhesion layer, the adhesion layer is arranged on the microstructure layer, and adhesion between the friction nano sensor and a user is achieved through wetting. The friction nano sensor is convenient to wear, when the sensor is worn, stable adhesion of a device can be achieved by wetting the adhesion layer with a small amount of water, a transparent adhesive tape or a double-faced adhesive tape does not need to be used for assisting in wearing, and the self-adhesion function of the device is achieved.

Description

technical field [0001] The invention belongs to the technical field related to flexible wearable electronic devices, and more specifically relates to a high-permeability friction nanosensor and a preparation method thereof. Background technique [0002] Traditional electronic devices are composed of rigid components such as silicon-based chips, hard circuit boards, resistors, capacitors, etc., which limit the scope of use and function expansion of electronic devices. In recent years, with the development of material science and the progress of manufacturing technology, flexible electronic devices have gradually emerged, which has attracted extensive attention of scholars. Among them, flexible wearable electronic devices are widely used in the fields of flexible sensing, intelligent prosthetics, and human health monitoring due to their stretchability, flexibility, intelligence, and ease of integration with various sensing devices and wearable electronic systems. It shows gre...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): A61B5/00D01F6/74H02N1/04G01D5/12
CPCA61B5/6802D01F6/74H02N1/04G01D5/12
Inventor 吴豪仇裕淇
Owner HUAZHONG UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com