Method for controlling pinning layer domain structure to realize polymorphic storage in giant/tunneling magnetoresistance structure and polymorphic memory
A technology of tunneling magnetoresistance and multi-state storage, which is applied in the fields of magnetic field-controlled resistors, static memory, digital memory information, etc., and can solve the problem that multi-state storage of four states is difficult to achieve.
Pending Publication Date: 2021-08-27
致真存储(北京)科技有限公司
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[0004] In view of the above-mentioned technical problems in the prior art, the embodiment of the present application proposes a method of controlling the domain structure of the pinned layer to realize multi-state storage in the giant / tunneling magnetoresistance structure, so as to solve the problem of stable multi-state storage in the prior art. 4 states are difficult to realize
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[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.
[0027] The terminology used in the present application is for describing specific embodiments only, and does not limit the scope of the present application. As shown in the specification and claims of this application, words such as "a", "an", "an" and / or "the" do not refer to the singular, and may also include the plural, unless the context clearly indicates an exception. Generally speaking, t...
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Abstract
The invention discloses a method for controlling a pinning layer domain structure to realize polymorphic storage in a giant / tunneling magnetoresistance structure and a polymorphic memory. The method comprises the following steps: introducing current into the spin generation layer to generate spin current, so as to generate a spin orbit torque effect; changing at least one of the number, size and direction of antiferromagnetic magnetic sequences in the antiferromagnetic pinned layer based on the generated spin-orbit torque effect, thereby affecting at least one of the number, size and direction of magnetic domains in the ferromagnetic pinned layer; controlling the magnitude of the current, so that the antiferromagnetic magnetic sequence generates multiple deflections of different degrees; and reading the deflection based on the magnetoresistance effect, thereby realizing direct storage of a plurality of resistance states by one physical storage unit.
Description
technical field [0001] The present application relates to the technical field of data storage, in particular to a method for controlling the domain structure of a pinning layer to realize multi-state storage in a giant / tunneling magnetoresistance structure and a multi-state memory. Background technique [0002] In order to meet the ever-increasing demand for non-volatile, high-density, low-power consumption data storage in consumer electronics and big data storage, the demand for multi-state non-volatile memory devices is more urgent. In a multi-state memory device, one memory unit can record multiple values instead of two values of "0" and "1", which can greatly improve data storage density, and is also very useful for emerging industries such as artificial intelligence and neural networks. big help. At present, the methods for realizing multi-state non-volatile storage are as follows: first, use the phase change of the material itself to prepare a multi-state phase-ch...
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IPC IPC(8): G11C11/15H01L43/08H10N50/10
CPCG11C11/15H10N50/10
Inventor 卢世阳陈伟斌刘宏喜曹凯华王戈飞
Owner 致真存储(北京)科技有限公司