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Polishing method of box dam layer, box dam and ceramic substrate

A technology of ceramic substrates and dams, which is applied in the direction of grinding/polishing equipment, machine tools for surface polishing, and parts of grinding machine tools, and can solve problems such as insufficient thickness of electroplated copper

Pending Publication Date: 2021-09-10
赛创电气(铜陵)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is that the existing dam polishing has insufficient thickness of electroplated copper, copper slag / copper particles, and copper bumps on the back side, and provides a method that can at least solve the problem of insufficient thickness of electroplated copper, copper slag / copper particles Method of polishing dam layer and metal dam and ceramic substrate produced therefrom

Method used

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  • Polishing method of box dam layer, box dam and ceramic substrate
  • Polishing method of box dam layer, box dam and ceramic substrate
  • Polishing method of box dam layer, box dam and ceramic substrate

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Embodiment Construction

[0048] The technical solutions in the embodiments of the present invention are clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments without creative efforts by those skilled in the art fall within the protection scope of the present invention.

[0049] The high-speed stage referred to in the present invention is the stage with the highest rotational speed in polishing, such as stage four and stage five, that is, the fourth stage and the fifth stage,

[0050] According to the debugging results of the polishing speed in the high-speed stage, use and carry out the polishing parameter debugging experiment, and confirm the polishing effect as shown in Table 7:

[0051]

[0052] Table 7

[0053] It can be seen from Table 7 that the difference between conditi...

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Abstract

The invention discloses a polishing method of a box dam layer. The method comprises the following steps that supplementary electroplating is conducted on the box dam layer, the front face of a substrate of the box dam layer subjected to supplementary electroplating faces upwards, the back face of the substrate is embedded into a wax-free pad, polishing is conducted twice through a wandering star wheel, the rotating speed of the high-speed stage of each time of polishing is 28 rpm, and the box dam layer with the qualified leveling effect is obtained. The polishing method has the beneficial effects that qualified polishing of the front face of the box dam can be achieved by improving the polishing technology, adopting the mode of the wandering star wheel and the wax-free pad and adjusting the polishing rotating speed.

Description

technical field [0001] The invention relates to the technology in the field of microelectronic packaging, in particular to a polishing method for a dam layer and a dam and a ceramic substrate prepared therefrom. Background technique [0002] At present, sensors, crystal oscillators, resonators, power semiconductors, lasers and other optoelectronic devices that require high air tightness and reliability are generally packaged with ceramic substrates. The common structure is a ceramic with a circuit layer. A metal dam is set on the base, and the metal dam and the ceramic base form a sealed chamber, which is used to place device chips, fill packaging glue, inert gas or directly vacuumize, so as to achieve high-reliability hermetic packaging. [0003] In the manufacturing process of metal dams, it includes lamination-exposure-development-electroplating-polishing-mid-measurement-forming-finished products, in which wax-free pads / star wheels are generally used for polishing, and th...

Claims

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Application Information

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IPC IPC(8): H01L21/48B24B29/02B24B49/00H01L23/02H01L23/15
CPCH01L21/4817H01L23/02H01L23/15B24B29/02B24B49/006
Inventor 陈文阳罗玉杰于正国
Owner 赛创电气(铜陵)有限公司