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Semiconductor device and manufacturing method thereof

A technology for semiconductors and connection pads, which is used in semiconductor/solid-state device manufacturing, semiconductor devices, and semiconductor/solid-state device components, etc., and can solve problems such as volume reduction and capacitance reduction.

Pending Publication Date: 2021-09-10
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, while transistors are thus reduced in size, the size of these capacitors also needs to be further reduced

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0026] The present invention relates to an improved semiconductor device and its manufacturing method. The following descriptions of the present invention are intended to enable those skilled in the art to which the present invention pertains to make and apply the present invention according to their specific applications and requirements. Those skilled in the art of the invention can easily make various modifications to the invention, and the principles defined here can also be applied to these other embodiments. Therefore, the present invention is not limited to the specific embodiments described below, but should be consistent with the broadest scope to which the principles and features disclosed in this specification belong.

[0027] In the drawings, the thickness of various layers, films, panels, regions, etc., are shown exaggerated for clarity. Throughout the specification, the same or similar reference numerals denote the same elements. It will be understood that when...

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a semiconductor substrate and a plurality of columnar capacitors. The semiconductor substrate includes a plurality of first connection pads and a plurality of second connection pads. The second connecting pads are respectively arranged on the first connecting pads. The columnar capacitors are arranged on the second connecting pads respectively. The first end of each columnar capacitor is connected with one of the second connecting pads, and each columnar capacitor comprises a second end opposite to the first end. The distance between the first end and the second end of each columnar capacitor is in the range of 1 micrometer to 1.8 micrometers. The columnar capacitor of the semiconductor device can provide enough capacitance value in the semiconductor device.

Description

technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, in particular to a semiconductor device with a plurality of columnar capacitors and a manufacturing method thereof. Background technique [0002] The development of electronic components has continuously developed lighter, thinner, shorter and smaller components, and dynamic random access memory (dynamic random access memory, DRAM) has also continued to meet the needs of high density and high integration. Develop in the direction of miniaturization. DRAM comprising a plurality of memory cells is one of the mainstream volatile memory devices in use today. Each memory cell includes a transistor and at least one capacitor, and the transistors and capacitors of these memory cells are connected in series. These memory cells form multiple memory arrays. Each memory cell is located using a digit line and a word line, one of which may locate one of the memory arrays,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/108H01L21/8242H01L49/02H10N97/00
CPCH01L28/40H10B12/315H10B12/34H10B12/02H10B12/033H01L28/90H01L21/31116H10B12/31H10B12/0335H01L21/31111H01L29/7827H01L23/5283
Inventor 张佳琳
Owner NAN YA TECH