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Normal-temperature texturing method, silicon wafer formed by texturing, solar cell piece and preparation method of silicon wafer and solar cell piece

A technology for solar cells and solar cells, applied in the field of solar cells, can solve the problems of low conversion efficiency and other performance, high average reflectivity of silicon surface, and high heating temperature, and achieves a significant decrease in light reflectivity, convenient application, and uniform structure. Effect

Pending Publication Date: 2021-09-17
北京普扬科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, in the existing technology of texturing process, there are common problems such as high heating temperature, long reaction time, relatively large average reflectance of the obtained silicon surface, and low fill factor and conversion efficiency of the solar cells after texturing.

Method used

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  • Normal-temperature texturing method, silicon wafer formed by texturing, solar cell piece and preparation method of silicon wafer and solar cell piece
  • Normal-temperature texturing method, silicon wafer formed by texturing, solar cell piece and preparation method of silicon wafer and solar cell piece
  • Normal-temperature texturing method, silicon wafer formed by texturing, solar cell piece and preparation method of silicon wafer and solar cell piece

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] 1) Surface cleaning step

[0055] Take the size as 156×156cm 2 The P-type silicon wafer (resistivity of 1 to 3 Ωcm) was first placed in acetone for ultrasonic cleaning for 5 minutes, then placed in ethanol for ultrasonic cleaning for 5 minutes, and then placed in a mixture of sulfur solution and hydrogen peroxide solution (sulfuric acid solution). The concentration is 70wt%, the concentration of hydrogen peroxide solution is 35wt%, the volume ratio of sulfuric acid solution and hydrogen peroxide solution is 3:1), heat and boil the silicon wafer and keep it for 0.5 hours, and finally ultrasonically clean it with deionized water.

[0056] 2) Etching step

[0057] The silicon wafers pre-cleaned and washed with water in step 1) are immersed in the acidic texturing solution composed of copper nitrate, hydrofluoric acid and hydrogen peroxide (wherein, the concentration of copper nitrate is 80 mmol / L, and the concentration of hydrofluoric acid is 5.6 mol. / L, the concentrati...

Embodiment 2-5

[0061] The operation steps are the same as those in Example 1, except that the concentrations of copper nitrate, hydrofluoric acid and hydrogen peroxide in the acidic texturing solution, as well as the temperature and time during texturing are different.

[0062] In Example 2, the concentration of copper nitrate was 70 mmol / L, the concentration of hydrofluoric acid was 7 mol / L, the concentration of hydrogen peroxide was 0.4 mol / L, the temperature of the acidic texturing solution was 35°C, and the texturing time was 6 minutes.

[0063] In Example 3, the concentration of copper nitrate was 120 mmol / L, the concentration of hydrofluoric acid was 2.4 mol / L, the concentration of hydrogen peroxide was 1.2 mol / L, the temperature of the acidic texturing solution was 25°C, and the texturing time was 8 minutes .

[0064] In Example 4, the concentration of copper nitrate was 100 mmol / L, the concentration of hydrofluoric acid was 4.5 mol / L, the concentration of hydrogen peroxide was 1 mol / ...

Embodiment 6

[0090] 1) Surface cleaning step

[0091] Take the size as 156×156cm 2 The N-type silicon wafer (resistivity of 1 to 3Ωcm) was first placed in acetone for ultrasonic cleaning for 5 minutes, then placed in ethanol for ultrasonic cleaning for 5 minutes, and then placed in a mixture of sulfuric acid and hydrogen peroxide (the volume of sulfuric acid and hydrogen peroxide) The ratio is 3:1, the concentration of sulfuric acid is 70 wt %, and the concentration of hydrogen peroxide is 35 wt %) to heat and boil the silicon wafer for 1 hour, and finally ultrasonically clean it with deionized water.

[0092] 2) Etching step

[0093] The silicon wafer pre-cleaned and washed with water in step 1) is immersed in the acidic texturing liquid that is made up of copper nitrate, hydrofluoric acid and hydrogen peroxide (wherein, the concentration of copper nitrate is 80mmol / L, and the concentration of hydrofluoric acid is 5mol / L, the concentration of hydrogen peroxide is 0.9 mol / L), the temper...

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Abstract

The invention discloses an acidic texturing solution and a texturing method for etching a solar cell silicon wafer, a solar cell and a manufacturing method of the solar cell. The acidic texturing liquid comprises a copper ion source, a fluorine ion source and hydrogen peroxide. The acidic texturing liquid can be used for texturing the surface of the silicon wafer well, so that an independent, complete and closely arranged inverted pyramid structure is formed on the surface of the silicon wafer at room temperature within an extremely short time. According to the structure, the reflectivity of incident light on the textured surface is reduced to 4%, and the efficiency of the solar cell is improved. According to the acidic texturing liquid and the texturing method, the production cost can be reduced, the reaction temperature can be reduced, the reaction time can be shortened, and the production capacity can be increased.

Description

[0001] This application is a division of an application date of November 16, 2017, an application number of 201711134853.4, and the title of the invention "A normal temperature texturing method, and silicon wafers, solar cells and preparation methods thereof made from texturing thereof" Application. technical field [0002] The invention relates to the technical field of solar cells, in particular, to a normal temperature texturing method for an inverted pyramid of silicon wafers, a silicon wafer, a solar cell sheet and a preparation method thereof. Background technique [0003] With the development of society, the demand for energy in various countries in the world has increased sharply, while non-renewable resources such as fossil energy are decreasing day by day, and fossil energy is seriously polluting the environment. As a new type of green renewable energy, solar energy is expected to become one of the main energy sources in the future. At present, crystalline silicon ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0236H01L31/18H01L21/306
CPCH01L31/02363H01L31/1804H01L21/30604Y02E10/547Y02P70/50
Inventor 陈伟吴俊桃陈全胜赵燕王燕刘尧平杜小龙
Owner 北京普扬科技有限公司
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