Semiconductor element and manufacture method thereof

Abstract

The invention provides a semiconductor element and a manufacture method thereof. The manufacture method includes depositing a first dielectric layer in an opening, the first dielectric layer comprising a semiconductor element and a non-semiconductor element. The method further includes depositing a semiconductor layer on the first dielectric layer, the semiconductor layer comprising a first element that is the same as the semiconductor element. The method further includes introducing a second element to the semiconductor layer, wherein the second element is the same as the non-semiconductor element. The method further includes applying a thermal annealing process to the semiconductor layer to change the semiconductor layer into a second dielectric layer.

Description

[0001] This application is a divisional application of a patent application with an application date of December 30, 2016, an application number of 201611262843.4, and an invention title of "semiconductor element and its manufacturing method". technical field [0002] The present disclosure relates to a semiconductor device and a manufacturing method thereof. Background technique [0003] In the semiconductor integrated circuit (IC) industry, technological advances in IC materials and design have produced several generations of ICs, each with smaller and more complex circuits than the previous generation. In the course of IC evolution, functional density (ie, the number of interconnected elements per wafer area) has generally increased, while geometry size (ie, the smallest component (or wire) that can be produced using a manufacturing process) has decreased. Small. This scaling process generally provides benefits by increasing production efficiency and reducing associated ...

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Problems solved by technology

This scaling also increases the complexity of IC processing and manufacturing

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