Reflectivity adjusting structure, manufacturing method and display panel

A technology for adjusting structure and reflectivity, applied in optical components, optics, instruments, etc., can solve the problems of high objective conditions and poor compatibility of asymmetric transmission devices, and achieve insensitive design structure polarization, low design condition requirements, easy processing effect

Pending Publication Date: 2021-10-22
BEIJING BOE TECH DEV CO LTD +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The embodiment of the present application solves the problem of high objective requirements and poor compatibility in the design of asymmetric transmission devices in the prior art by providing a reflectivity adjustment structure, manufacturing method and display panel, wherein the reflectance adjustment structure does not rely on optical Polarization, and the manufacturing process can be compatible with the CMOS manufacturing process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reflectivity adjusting structure, manufacturing method and display panel
  • Reflectivity adjusting structure, manufacturing method and display panel
  • Reflectivity adjusting structure, manufacturing method and display panel

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0069] Example 1: By setting the metal layer 131 radius r1=100nm, the dielectric layer 132 radius r2=150nm, the metal layer 131 thickness h1=125nm, the dielectric layer 132 thickness h2=550nm, the metal material is Al, and the base layer 133 radius r3=250nm , the dielectric layer 132 is made of SiN x , the refractive index of the dielectric layer 132 is 2.02, and the material of the base layer 133 is Al 2 o 3 , the refractive index of the base layer 133 is 1.76, and the refractive index of the embedded elastic medium layer 11 is 1.52. The embedded unit 13 is designed to change the gap to two situations of 600nm and 1.1um.

[0070] Based on the above example conditions, for the user end, usually the elastic medium layer 11 is not deformed, and when the gap between the embedded units 13 is 600 nm, the reflectance of the reflectance adjusting structure 10 on the display panel 20 in the visible light band can reach 70% stably, Can be used as a reflector with high reflectivity, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
radiusaaaaaaaaaa
Login to view more

Abstract

The embodiment of the invention discloses a reflectivity adjusting structure, a manufacturing method and a display panel. The reflectivity adjusting structure comprises an elastic dielectric layer and a plurality of embedded units, and each embedded unit comprises a metal layer, and the multiple embedded units are arranged in the elastic dielectric layer in an array mode, wherein the elastic dielectric layer is deformed, and the gap between the embeddable units is changed. The design of the reflectivity adjusting structure does not depend on optical polarization, the design condition requirement is low, the polarization of the design structure is not sensitive, and the reflectivity adjusting structure can be directly used for the natural light environment; and the metal layer and the elastic dielectric layer which form the structure are easy to process and can be well compatible with the existing manufacturing process.

Description

technical field [0001] The invention relates to the technical field of optical devices, in particular to a reflectivity adjustment structure, a manufacturing method and a display panel. Background technique [0002] Asymmetric Light Transmission (ALT) refers to the difference in transmittance measured when light is incident on both sides of the device. It has potential applications in the development of next-generation all-optical computing processing equipment and systems, as well as in automobiles and other fields. The schemes to realize asymmetric transmission devices of light are mainly based on optical non-reciprocity methods, such as magneto-optic effect, nonlinear optics, indirect interband photon transition and photoacoustic effect, etc. Optical nonreciprocity is an ideal solution because it enables the device to transmit any optical mode in one direction and filter the direction-parallel optical mode with a polarizer in the other direction. However, the above sche...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G02B26/00
CPCG02B26/00
Inventor 周健李文波
Owner BEIJING BOE TECH DEV CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products