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Data reading method of storage unit, memory, storage system and storage medium

A storage unit and data reading technology, used in static memory, electrical digital data processing, instruments, etc., can solve the problem of increasing the number of re-reads and reading time, and reduce the number of failed reads and the time for correct reading. , the effect of improving the efficiency of data reading

Active Publication Date: 2021-10-26
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method needs to repeatedly use ECC for error correction and verification, which brings additional overhead. At the same time, the increase in the number of rereads will also increase the reading time.

Method used

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  • Data reading method of storage unit, memory, storage system and storage medium
  • Data reading method of storage unit, memory, storage system and storage medium
  • Data reading method of storage unit, memory, storage system and storage medium

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Embodiment Construction

[0023] For a better understanding of the application, various aspects of the application will be described in more detail with reference to the accompanying drawings. It should be understood that these detailed descriptions are descriptions of exemplary embodiments of the application only, and are not intended to limit the scope of the application in any way. Throughout the specification, the same reference numerals refer to the same elements. The expression "and / or" includes any and all combinations of one or more of the associated listed items.

[0024] It should be noted that in this specification, expressions such as first, second, third, etc. are only used to distinguish one feature from another, and do not represent any limitation on the features, especially do not represent any sequential order. Therefore, a first state value discussed in this application may also be referred to as a second state value, and first data may also be referred to as second data, and vice ve...

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Abstract

The invention provides a data reading method of a storage unit, a memory, a storage system and a storage medium, and relates to the field of semiconductor design and manufacturing, the method comprises the following steps: under the condition of applying a default reading voltage, reading a first storage unit in a high state for many times to obtain a plurality of sensing voltages, wherein the high state is a state in which the threshold voltage of the storage unit is greater than or equal to a preset threshold; comparing the plurality of sensing voltages with a preset reference voltage to determine a final state value; and applying a read voltage corresponding to the final state value to the first storage unit so as to read the first storage unit. By selectively reading in the chip, the influence caused by the offset of partial or all threshold voltages can be compensated, and the number of reading failures is reduced, so that the correct reading time is shortened, and the data reading efficiency of the storage unit is improved.

Description

technical field [0001] The present application relates to the field of semiconductor design and manufacturing, and more specifically, to a method for reading data from a storage unit, a memory, a storage system, and a storage medium. Background technique [0002] With the development of science and technology, the market scale of the integrated circuit industry is getting bigger and bigger, and in the whole integrated circuit industry, the status of the memory industry is becoming more and more prominent, among which the process and technology of flash memory have been developed by leaps and bounds in recent years. [0003] The basic principle of flash memory is that carriers (electrons or holes) cross the charge barrier layer and inject a certain amount of charge into the memory cell (cell) to complete the process of data writing, and then the threshold value when the memory cell is turned on can be voltage to read the stored data. Therefore, when reading data from a memor...

Claims

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Application Information

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IPC IPC(8): G06F11/10G11C29/42
CPCG06F11/1068G11C29/42
Inventor 李润泽杜智超王瑜郭晓江王颀田野赵利川
Owner YANGTZE MEMORY TECH CO LTD
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