Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method, device and system for decomposing layout of semiconductor structure and storage medium

A structure layout and semiconductor technology, applied in the field of image processing, can solve problems such as increasing redundancy, and achieve the effect of good representation and appropriate quantity

Active Publication Date: 2021-10-26
YANGTZE MEMORY TECH CO LTD
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, through the projection of the anchor angle, although the amount of information is increased, it also increases redundancy, which is not helpful for clustering

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method, device and system for decomposing layout of semiconductor structure and storage medium
  • Method, device and system for decomposing layout of semiconductor structure and storage medium
  • Method, device and system for decomposing layout of semiconductor structure and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] For a better understanding of the present application, various aspects of the present application will be described in more detail with reference to the accompanying drawings. It should be understood that these detailed descriptions are merely illustrative of exemplary embodiments of the present application and are not intended to limit the scope of the present application in any way. Throughout the specification, the same reference numerals refer to the same elements. The expression "and / or" includes any and all combinations of one or more of the associated listed items.

[0041] It should be noted that in this specification, the expressions first, second, third etc. are only used to distinguish one feature from another feature and do not imply any limitation on the feature. Accordingly, the first subgraph discussed below may also be referred to as the second subgraph without departing from the teachings of the present application. vice versa.

[0042]In the drawing...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method, a device and a system for decomposing the layout of a semiconductor structure and a storage medium. The method comprises the following steps: forming a to-be-decomposed structural layout original graph based on the layout of a semiconductor structure at a preset section; obtaining a plurality of sub-graphs comprising at least one part of the structural layout original graph based on the structural layout original graph; clustering the invariant moments of the plurality of sub-graphs to obtain a plurality of classes containing the invariant moments; and classifying the sub-graphs corresponding to the invariant moments in the same class into the same set so as to select feature sub-graphs from all the sub-graphs in each set.

Description

technical field [0001] The present application relates to the field of image processing, and more particularly, to a method, device, system and storage medium for decomposing the layout of a semiconductor structure. Background technique [0002] In the field of semiconductor manufacturing, designers need to design large, complex layouts. Designers often employ design-for-manufacturing (DFM) techniques to improve design robustness to further improve product reliability and increase manufacturing yield. [0003] Any DFM recommendation that may be of value to a designer must provide an accurate prediction of how a particular design will be fabricated under different expected process conditions. Achieving this predictive capability requires an understanding of process windows at all stages of the design flow. Lithography Friendly Design (LFD) captures information such as how the design will respond to lithography window effects during fabrication. This knowledge enables desig...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06K9/62G06K9/46G06K9/52G06K9/00G06F30/392
CPCG06F30/392G06F18/23
Inventor 郑先意
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products