Semiconductor device

Abstract

The invention provides a semiconductor device. The semiconductor device includes a first source / drain structure, a second source / drain structure, a third source / drain structure, a first dummy fin, and a second dummy fin. The first dummy fin is located between the first source / drain structure and the second source / drain structure along the direction to isolate the first source / drain structure from the second source / drain structure; the second dummy fin is located between the second source / drain structure and the third source / drain structure in the direction to isolate the second source / drain structure from the third source / drain structure. The first dummy fin includes an outer dielectric layer, an inner dielectric layer on the outer dielectric layer, and a first cap layer on the outer dielectric layer and the inner dielectric layer. The second dummy fin includes a bottom portion and a second cap layer on the bottom portion.

Description

technical field [0001] Embodiments of the present invention relate to source / drain separation structures and fabrication methods thereof, in particular to forming different dummy fins to achieve different spaces between active regions to reduce size or improve performance. Background technique [0002] The semiconductor integrated circuit industry has experienced exponential growth. Technological advances in integrated circuit materials and design have resulted in each generation of integrated circuits having smaller and more complex circuits than the previous generation. In the evolution of integrated circuits, functional density (eg, the number of interconnecting devices per unit chip area) generally increases as geometric size (eg, the smallest component or circuit that can be produced by the fabrication process employed) shrinks. A shrinking process facilitates increased throughput and lower associated costs. Shrinking dimensions also increase the complexity of handlin...

AI Technical Summary

Problems solved by technology

Dummy fins add space and create challenges when scaling down standard cell sizes

While existing dummy fins and their methods of formation are generally suitable for the purpose for which they were developed, they do not meet all requirements

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