Solid-state imaging device, imaging system, and imaging method
A solid-state imaging device and pixel technology, which can be used in measurement devices, TV system components, radio wave measurement systems, etc., and can solve problems such as complex structures and difficult implementations
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no. 1 Embodiment approach
[0056] exist figure 1 12 shows a part of the TOF-type configuration capable of distance imaging of the imaging system 11 according to the first embodiment of the present invention. here, figure 1 A part of the image pickup system 11 shown is composed of a light source 12 that projects irradiated light 17 onto a subject 16, an imaging optical system 13 that reflects the irradiated light 17 from the subject 16 and enters reflected light 18, and a TOF solid-state imaging device. 14. The image processing circuit 15 is formed.
[0057] exist figure 2 Expressed in figure 1 A part of the configuration of the solid-state imaging device 14 is shown. Such as figure 2 As shown, the solid-state imaging device 14 of the first embodiment divides virtual pixels including a plurality of transfer path control type pixels into X ij (i=1~m 1 , j=1~n 1 :m 1 , n 1 are positive integers of 2 or more, respectively. ) are arranged in a grid pattern, and the pixel array unit 1 is filled (...
no. 2 Embodiment approach
[0111] exist Figure 11 The circuit configuration of the transfer path control type pixel of the solid-state imaging device according to the second embodiment of the present invention is shown in . If will contain respectively Figure 11 The virtual pixel division of the three-tap one-discharge type TOF pixel shown in X ij with contains image 3 Virtual pixel division of four-tap TOF pixels shown in X ij compare, then in image 3 The fourth transfer control mechanism G4 connected to the photodiode part PD, the fourth charge detection part FD4, the fourth detection part capacitor C4, the fourth reset transistor RT4, the fourth source follower transistor SF4, and the fourth selection transistor SL4 are Figure 11 The center is not connected to the photodiode portion PD, but is connected to the charge discharge mechanism GD instead of the fourth transfer control mechanism G4. The charge discharge mechanism GD discharges charges other than signal charges such as charges cause...
no. 3 Embodiment approach
[0127] Regarding the method of simultaneously realizing the mode of cyclically reading signals from individual pixels and the mode of summing and reading signals from pixels in a 2×2 intersection common area, in Figure 17 means with Figure 4 different two-dimensional arrays. In the solid-state imaging device according to the third embodiment, the unit cells including the 2×2 intersection common area are not arranged in a square, but are divided into X by dummy pixels adjacent to the left and right. ij 1 / 2 of the length of the virtual pixel division between the parallelograms arranged in the vertical direction (column direction). Figure 17 The shown first transfer control means G1, second transfer control means G2, third transfer control means G3, and fourth transfer control means G4 are the same as those of the solid-state imaging devices of the first and second embodiments, respectively, and may be insulating barriers. The pole type transfer control mechanism may also be...
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