Crucible system for growing crystals by physical vapor transport method and use method of crucible system

Abstract

The invention discloses a crucible system for growing crystals by a physical vapor transport method and a use method of the crucible system. An internal space defined by a crucible body and a crucible cover, namely a crystal growth cavity, is divided into two independent parts by placing an isolation piece in a crucible, an isolation chamber is arranged between the upper surface of the isolation piece and the crucible cover, the upper surface of the isolation piece and the crucible cover are separated into two independent parts. and a crystal growth chamber is arranged between the lower surface of the isolation piece and the crucible bottom. In combination with the technological process of a PVT method, the growth chamber is sealed by utilizing gas-phase transmission of vacuumizing, inflating and raw material sublimation in the technological process. By using the crucible system disclosed by the invention, the leakage of raw materials and bidirectional pollution in an open crucible are greatly reduced, and a more stable crystal growth environment is created by virtue of a closed state design, so that the crystal quality is improved, and the production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of crystal growth, in particular to a crucible system for growing crystals by a physical vapor transport method and an application method thereof. Background technique [0002] The physical vapor transport method is a method widely used in crystal growth, especially in the field of third-generation semiconductor crystal growth such as aluminum nitride and silicon carbide, and has now become the most mainstream method for preparing large-sized aluminum nitride and silicon carbide single crystals . In this field, the physical vapor transport method mainly heats the crucible at high temperature, the raw material is sublimated into a gas phase at high temperature, and through different thermal field designs, the gas phase is transported to a relatively low temperature growth area for deposition and continuous growth. In addition, the physical vapor transport method is also suitable for high-temperature purifica...

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Problems solved by technology

However, on the one hand, during the crystal growth process using this method, the sublimation of the raw materials at high temperature will continuously produce gas phase substances and expand, and it is easy to open the crucible lid to cause a large amount of leakage and loss of raw materials.

The partially open crucible design is more likely to cause two-way pollution to the furnace cavity and raw materials

Leaked gaseous substances tend to deposit on the temperature measurement window at low temperature and cause blockage, resulting in the failure of normal operation of the equipment

On the other hand, it is difficult to ensure the air tightness in the crucible, and it is also difficult to control the mass transfer process and supersaturation distribution in the crucible, which adds obstacles to the theoretical analysis of the crystal growth process.

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