Graphite substrates for improved wavelength uniformity in epiwafers

Abstract

The disclosure provides a graphite substrate for improving the wavelength consistency of an epitaxial wafer, which belongs to the technical field of semiconductors. The graphite substrate has a multi-prism structure, and the peripheral wall of the graphite substrate has a plurality of prism surfaces, and the connection between any two adjacent prism surfaces has a V-shaped groove, and the V-shaped groove along the The radial direction of the graphite substrate is depressed inward, and the length of the V-shaped groove is equal to the axial length of the graphite substrate. The growth of the epitaxial wafer on the graphite substrate provided by the present disclosure can make the emission wavelength of each region of the epitaxial wafer consistent, thereby improving the uniformity of the epitaxial wafer and ensuring the edge yield.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, and in particular, to a graphite substrate for improving wavelength consistency of epitaxial wafers. Background technique [0002] Semiconductor Light Emitting Diode (English: Light Emitting Diode, LED for short) is a semiconductor diode that can convert electrical energy into light energy. LED has the advantages of high efficiency, energy saving, green environmental protection, and has a wide range of applications in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power LEDs to realize semiconductor solid-state lighting is expected to become a new generation of light sources and enter thousands of households, causing a revolution in the history of human lighting. [0003] Epitaxial wafers are the primary finished products in the LED manufacturing process. When forming the epitaxial wafer, the substrate is placed on the tray in the...

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Problems solved by technology

[0005] The graphite substrate rotates at high speed during the formation of the epitaxial wafer, and there is gas flow on the surface of the graphite substrate at high speed, which will affect the gas distribution of the Mo source in the reaction chamber during the growth of the epitaxial wafer

And the farther away from the center of the graphite substrate, the distribution of the MO source will appear uneven

In particular, the edge position of the graphite substrate is subject to the largest centrifugal force and the largest linear velocity, which will intensify the flow velocity of the MO source gas flow, resulting in the phenomenon that the edge wavelength of the graphite substrate is abnormally short or long.

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