Miniature light emitting diode chip and preparation method thereof
A technology of light-emitting diodes and chips, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of blocking light, difficult to further reduce the size, and large size of micro-LED chips, so as to avoid blocking, reduce size, and ensure light output. effect of effect
Pending Publication Date: 2021-11-26
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology
[0004] Since the first electrode and the second electrode are arranged on the same side of the epitaxial structure, the side of the epitaxial structure needs to accommodate the first electrode and the second electrode, and ensure that there is a certain interval between the two electrodes, which will result in a micro light emitting diode The size of the chip is large, and it is difficult to further reduce the size; and if the first electrode and the second electrode are respectively arranged on different sides of the epitaxial structure, the electrodes on the light-emitting side will block the light, and will affect the light-emitting effect of the micro-LED chip
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[0037] In order to make the purpose, technical solution and advantages of the present disclosure clearer, the implementation manners of the present disclosure will be further described in detail below in conjunction with the accompanying drawings.
[0038] Unless otherwise defined, the technical terms or scientific terms used herein shall have the usual meanings understood by those having ordinary skill in the art to which the present disclosure belongs. "First", "second", "third" and similar words used in the specification and claims of this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components . Likewise, words like "a" or "one" do not denote a limitation in quantity, but indicate that there is at least one. Words such as "comprises" or "comprises" and similar terms mean that the elements or items preceded by "comprises" or "comprises" include the elements or items listed after "comprises" or "comprises" and thei...
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Abstract
The invention provides a miniature light emitting diode chip and a preparation method thereof. The miniature light emitting diode chip comprises a first semiconductor layer, a multi-quantum well layer, a second semiconductor layer, a transparent conductive layer, a passivation layer, a first electrode and a second electrode, wherein the second semiconductor layer, the multi-quantum well layer, the first semiconductor layer and the passivation layer are sequentially stacked on the transparent conductive layer, the passivation layer has a through hole, the through hole exposes the first semiconductor layer and is opposite to the middle of the first semiconductor layer, and the first electrode is located in the through hole; and the second electrode is located on the surface, away from the second semiconductor layer, of the transparent conductive layer and comprises a plurality of first electrode blocks, and the first electrode blocks are arranged at intervals along the edge of the transparent conductive layer. According to the miniature light emitting diode chip, the size of the miniature light emitting diode chip can be reduced, and the light emitting effect of the miniature light emitting diode chip is ensured.
Description
technical field [0001] The disclosure relates to the technical field of optoelectronic manufacturing, in particular to a micro light emitting diode chip and a preparation method thereof. Background technique [0002] Micro Light Emitting Diode (Micro Light Emitting Diode, Micro LED) refers to an ultra-small light emitting diode with a side length of 10 μm to 100 μm. Micro light emitting diodes are small in size, can be arranged more densely to greatly improve resolution, and have self-illumination Features, with high brightness, high contrast, high responsiveness and power saving features. [0003] In the related art, a miniature LED chip usually includes an epitaxial structure, a first electrode and a second electrode, and the epitaxial structure includes a second semiconductor layer, a multi-quantum well layer and a first semiconductor layer stacked in sequence. Wherein, both the first electrode and the second electrode are disposed on the same side of the epitaxial struc...
Claims
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IPC IPC(8): H01L33/38H01L33/40H01L33/00
CPCH01L33/38H01L33/387H01L33/40H01L33/007H01L2933/0016
Inventor 兰叶王江波吴志浩
Owner HC SEMITEK ZHEJIANG CO LTD