Infrared detector mirror image pixel and infrared detector based on CMOS process

Abstract

The invention relates to an infrared detector mirror image pixel and an infrared detector based on a CMOS process, the mirror image pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure which are both prepared by using the CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a first columnar structure, and the infrared conversion structure is electrically connected with the CMOS measuring circuit system through the first columnar structure and the supporting base; the beam structure is located on the side, close to the CMOS measurement circuit system, of the absorption plate, the absorption plate comprises a metal structure close to or away from the side, close to or away from the CMOS measurement circuit system, of the CMOS measurement circuit system, and at least part of the reflection plate is located in the orthographic projection of the metal structure. According to the technical scheme, the problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, and in particular to an infrared detector mirror image element and an infrared detector based on a CMOS process. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the...

AI Technical Summary

Problems solved by technology

[0012] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector image element and an infrared detector based on a CMOS process, Through the technical solution of the present disclosure, the problems of low performance, low pixel scale, and low yield rate of traditional MEMS process infrared detectors are solved, and the accuracy of detection results is improved.

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